国产AV一区二区最新精品无删减,狠狠躁夜夜躁人人爽天天,国产网红精品一区二区在线观看

首頁 >BU128>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
BU128	文件：15.53 Kbytes Page：1 Pages	Bipolar NPN Device in a Hermetically sealed TO3	SEME-LAB Seme LAB	SEME-LAB
BUL128	文件：79.68 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
BUL128	文件：72.78 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
BUL128	文件：235.5 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
BUL128	文件：168.91 Kbytes Page：5 Pages	HighVoltageFast-SwitchingNPNPowerTransistor DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi	SUNTAC Suntac Electronic Corp.	SUNTAC
BUL128	文件：65.379 Kbytes Page：1 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign	TGS Tiger Electronic Co.,Ltd	TGS
BUL128	文件：265.57 Kbytes Page：2 Pages	iscSiliconNPNPowerTransistor DESCRIPTION ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitchmodepowersupplies.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
BUL128D	文件：66.76 Kbytes Page：3 Pages	SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed ·Integratedantiparallelcollector-emitterdiode APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitch-modepowersupplies.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
BUL128D	文件：65.58 Kbytes Page：1 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisd	TGS Tiger Electronic Co.,Ltd	TGS
BUL128D	文件：267.21 Kbytes Page：2 Pages	SiliconNPNPowerTransistor EATURES ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed DESCRIPTION ·Designedforuseinlightingapplicationsandlowcost switch-modepowersupplies.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
BUL128DB	文件：193.57 Kbytes Page：2 Pages	iscSiliconNPNPowerTransistor DESCRIPTION ?Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ?LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ?VeryHighSwitchingSpeed APPLICATIONS ?Designedforelectronicballastsforfluorescentlighting.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
BUL128D-B	文件：72.78 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
BUL128D-B	文件：228.24 Kbytes Page：8 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
BUL128FP	文件：78.76 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
BULB128	文件：216.04 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMulti-EpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
BULB128D	文件：210.59 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
BULK128	文件：83.21 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
BULK128	文件：219.98 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
BULK128	文件：225.08 Kbytes Page：11 Pages	Highvoltagefast-switchingNPNpowertransistor	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
BULK128D	文件：83.21 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS

12 3 >>>

晶體管資料

型號：
BU128
別名：
三極管、晶體管、晶體三極管
生產廠家：
制作材料：
Si-NPN
性質：
開關管（S）_功率放大（L）
封裝形式：
直插封裝
極限工作電壓：
300V
最大電流允許值：
10A
最大工作頻率：
80MHZ
引腳數：
2
可代換的型號：
BU109,BU110,BU210,BU526,BUY18,BUY69C,BUY70C,3DK208F,
最大耗散功率：
50W
放大倍數：
圖片代號：
E-44
vtest：
300
htest：
80000000
atest：
10
wtest：
50

詳細參數

型號：
BU128
制造商：
SEME-LAB
制造商全稱：
Seme LAB
功能描述：
Bipolar NPN Device in a Hermetically sealed TO3

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市一線半導體有限公司	BU128	MOT	24+	TO-3	286		詢價
深圳市科恒偉業(yè)電子有限公司	BU128	ST	1738+	TO-3	8529	科恒偉業(yè)!只做原裝正品,假一賠十!	詢價
深圳市航宇科工半導體有限公司	BU128	CHINA	22+	TO-3	640	航宇科工半導體-央企合格優(yōu)秀供方!	詢價
深圳市賽特興科技有限公司	BU128	ST	23+	TO-3	16900	正規(guī)渠道,只有原裝!	詢價
深圳市星佑電子有限公司	BU128	ST	22+	TO-3	16900	支持樣品原裝現貨提供技術支持!	詢價
深圳市創(chuàng)新跡電子有限公司	BU128	MOT	23+	TO-3	7300	專注配單,只做原裝進口現貨	詢價
深圳市安富世紀電子有限公司	BU128	MOT	23+	TO-3	7300	專注配單,只做原裝進口現貨	詢價
現代芯城（深圳）科技有限公司	BU128		24+	N/A	52000	一級代理-主營優(yōu)勢-實惠價格-不悔選擇	詢價
千層芯半導體(深圳)有限公司	BU-12BFFA-LL7001	AmphenolLTW	24+	DIP	17900	標準環(huán)形連接器ASSYLOCK12PINFCONNFPIN	詢價
深圳硅原半導體有限公司	BU-12BFFA-LL7001	Amphenol	2022+	connector	60000	專注軍用/航空連接器,十五年優(yōu)質供應商!	詢價

更多BU128供應商更新時間2025-1-16 14:30:00

晶體管資料

詳細參數

相關規(guī)格書

相關庫存