訂購數(shù)量 | 價格 |
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1+ |
首頁>BSM75GB120DN2_E3223>芯片詳情
BSM75GB120DN2_E3223_INFINEON/英飛凌_IGBT 模塊 N-CH 1.2KV 105A博通航睿技術(shù)
- 詳細信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
BSM75GB120DN2_E3223
- 功能描述:
IGBT 模塊 N-CH 1.2KV 105A
- RoHS:
否
- 制造商:
Infineon Technologies
- 產(chǎn)品:
IGBT Silicon Modules
- 配置:
Dual 集電極—發(fā)射極最大電壓
- VCEO:
600 V
- 集電極—射極飽和電壓:
1.95 V 在25
- C的連續(xù)集電極電流:
230 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
445 W
- 最大工作溫度:
+ 125 C
- 封裝/箱體:
34MM
供應(yīng)商
- 企業(yè):
天津市博通航睿技術(shù)有限公司
- 商鋪:
- 聯(lián)系人:
馬總
- 手機:
18322198211
- 詢價:
- 電話:
18322198211
- 地址:
天津市南開區(qū)科研西路12號356室
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