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BRUS105

ULTRA-FAST RECOVERY 4 to 6 AMPERES SINGLE-PHASE, FULL-WAVE BRIDGES HEAT SINK CHASSIS PC BOARD MOUNTING

edi

Electronic devices inc.

BSH105

N-channelenhancementmodeMOStransistor

GENERALDESCRIPTION N-channel,enhancementmode,logiclevel,field-effectpowertransistor.Thisdevicehasverylowthresholdvoltageandextremelyfastswitchingmakingitidealforbatterypoweredapplicationsandhighspeeddigitalinterfacing. TheBSH105issuppliedintheSOT23subminiatu

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BSH105

N-channelenhancementmode

GENERALDESCRIPTION N-channel,enhancementmode,logiclevel,field-effectpowertransistor.Thisdevicehasverylowthresholdvoltageandextremelyfastswitchingmakingitidealforbatterypoweredapplicationsandhighspeeddigitalinterfacing. TheBSH105issuppliedintheSOT23subminiatu

TYSEMITY Semiconductor Co., Ltd

臺灣TY半導(dǎo)體臺灣TY半導(dǎo)體有限公司

BSH105

N-ChannelMOSFET

■Features ●VDS(V)=20V ●ID=1.05A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

BSH105

N-channelenhancementmode

GENERALDESCRIPTION N-channel,enhancementmode,logiclevel,field-effectpowertransistor.Thisdevicehasverylowthresholdvoltageandextremelyfastswitchingmakingitidealforbatterypoweredapplicationsandhighspeeddigitalinterfacing. TheBSH105issuppliedintheSOT23subminiatu

ZPSEMI

ZP Semiconductor

BSH105

N-channelenhancementmodeMOStransistor

FEATURES ?Verylowthresholdvoltage ?Fastswitching ?Logiclevelcompatible ?Subminiaturesurfacemount package GENERALDESCRIPTION N-channel,enhancementmode, logiclevel,field-effectpower transistor.Thisdevicehasverylow thresholdvoltageandextremely fastswitchingmak

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BSW-105-XX-X

BOTTOMMOUNTSTRIPS

Bottommountsocket stripsaccept.025“SQ terminals:. Idealforsolderingand pluggingfromthesame sideoftheboard Forlowprofile connectionsandhigh temperaturesoldering,.

Samtec

Samtec, Inc

BT105

DC/DCConverters

ETCList of Unclassifed Manufacturers

未分類制造商

BT105S

SurfaceMountGlassPassivatedBridgeRectifiers

HY

HY ELECTRONIC CORP.

BU105

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighVoltage-VCER=1500V(Min.) ·Collector-EmitterSaturationVoltage-:VCE(sat)=5.0V(Max.)@IC=2.5A APPLICATIONS ·DesignedforuseinlineoperatedB&W(19and20inch110℃deflectioncircuits)orcolor(11and14inch90℃deflectioncircuitsTVreceivers.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    BRUS105

  • 制造商：

    EDI

  • 制造商全稱：

    Electronic devices inc.

  • 功能描述：

    ULTRA-FAST RECOVERY 4 to 6 AMPERES SINGLE-PHASE, FULL-WAVE BRIDGES HEAT SINK CHASSIS PC BOARD MOUNTING

供應(yīng)商型號品牌批號封裝庫存備注價格
EDI
23+
NA
39960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
AFE
23+
DIP
12560
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
BB
23+
SOP
8931
詢價
更多BRUS105供應(yīng)商 更新時間2025-2-27 16:40:00

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