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首頁 >BLS6>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
BLS6	文件：37.2 Kbytes Page：1 Pages	Axial Lead and Cartridge Fuses- Special Midget MidgetFuses SupplementaryOvercurrentProtection	Littelfuselittelfuse 力特力特公司	Littelfuse
BLS6	文件：122.34 Kbytes Page：1 Pages	Axial Lead and Cartridge Fuses	Littelfuselittelfuse 力特力特公司	Littelfuse
BLS6G2731(S)-120	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLS6G2731-120	文件：81.61 Kbytes Page：12 Pages	LDMOS S-band radar power transistor Generaldescription 120WLDMOSpowertransistorintendedforradarapplicationsinthe2.7GHzto3.1GHzrange. Features ■TypicalpulsedRFperformanceatafrequencyof2.7GHzto3.1GHz,asupplyvoltageof32V,anIDqof100mA,atpof100μswithδof10: ?Outputpower=120W	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLS6G2731-120	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLS6G2731-120	文件：1.11338 Mbytes Page：13 Pages	LDMOS S-band radar power transistor Generaldescription 120WLDMOSpowertransistorintendedforradarapplicationsinthe2.7GHzto3.1GHzrange. Features ?TypicalpulsedRFperformanceatafrequencyof2.7GHzto3.1GHz,asupplyvoltageof32V,anIDqof100mA,atpof100?swith?of10: ?Outputpower=120W ?Powe	AmpleonAmpleon USA Inc. 安譜隆	Ampleon
BLS6G2731-6G	文件：77.9 Kbytes Page：11 Pages	LDMOS S-Band radar power transistor Generaldescription 6WLDMOSpowertransistorintendedforradarapplicationsinthe2.7GHzto3.1GHzrange. Featuresandbenefits ■TypicalpulsedRFperformanceatafrequencyof2.7GHzto3.1GHz,asupplyvoltage of32V,anIDqof25mA,atpof100μsandaδof10: ◆Output	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLS6G2731-6G	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLS6G2731S-120	文件：81.61 Kbytes Page：12 Pages	LDMOS S-band radar power transistor Generaldescription 120WLDMOSpowertransistorintendedforradarapplicationsinthe2.7GHzto3.1GHzrange. Features ■TypicalpulsedRFperformanceatafrequencyof2.7GHzto3.1GHz,asupplyvoltageof32V,anIDqof100mA,atpof100μswithδof10: ?Outputpower=120W	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLS6G2731S-120	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLS6G2731S-120	文件：1.11338 Mbytes Page：13 Pages	LDMOS S-band radar power transistor Generaldescription 120WLDMOSpowertransistorintendedforradarapplicationsinthe2.7GHzto3.1GHzrange. Features ?TypicalpulsedRFperformanceatafrequencyof2.7GHzto3.1GHz,asupplyvoltageof32V,anIDqof100mA,atpof100?swith?of10: ?Outputpower=120W ?Powe	AmpleonAmpleon USA Inc. 安譜隆	Ampleon
BLS6G2731S-130	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLS6G2731S-130	文件：880.94 Kbytes Page：12 Pages	LDMOS S-band radar power transistor Generaldescription 130WLDMOSpowertransistorintendedforradarapplicationsinthe2.7GHzto3.1GHz range. Featuresandbenefits ?TypicalpulsedRFperformanceatafrequencyof2.7GHzto3.1GHz,asupplyvoltage of32V,anIDqof100mA,atpof300μswithδof10: ?Outputpow	AmpleonAmpleon USA Inc. 安譜隆	Ampleon
BLS6G2735L(S)-30	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLS6G2735L-30	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLS6G2735L-30	文件：1.62538 Mbytes Page：17 Pages	S-band LDMOS transistor Generaldescription 30WLDMOSpowertransistorforS-bandradarapplicationsinthefrequencyrangefrom 2.7GHzto3.5GHz. Featuresandbenefits ?IntegratedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstability ?Designedforbroadbandoperation(2.7GHz	AmpleonAmpleon USA Inc. 安譜隆	Ampleon
BLS6G2735LS-30	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLS6G2735LS-30	文件：1.62538 Mbytes Page：17 Pages	S-band LDMOS transistor Generaldescription 30WLDMOSpowertransistorforS-bandradarapplicationsinthefrequencyrangefrom 2.7GHzto3.5GHz. Featuresandbenefits ?IntegratedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstability ?Designedforbroadbandoperation(2.7GHz	AmpleonAmpleon USA Inc. 安譜隆	Ampleon
BLS6G2933S-130	文件：78.02 Kbytes Page：11 Pages	LDMOS S-band radar power transistor Generaldescription 130WLDMOSpowertransistorintendedforradarapplicationsinthe2.9GHzto3.3GHzrange. Featuresandbenefits ■TypicalpulsedRFperformanceatafrequencyof2.9GHzto3.3GHz,asupplyvoltage of32V,anIDqof100mA,atpof300μswithδof10: ◆Outpu	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLS6G2933S-130	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp

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詳細(xì)參數(shù)

型號(hào)：
BLS6
制造商：
LITTELFUSE
制造商全稱：
Littelfuse
功能描述：
Axial Lead and Cartridge Fuses- Special Midget

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市永貝爾科技有限公司	BLS6	LITTELFUSE	23+	NA	25060	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市一線半導(dǎo)體有限公司	BLS6G313520112	NXP	24+		6		詢價(jià)
深圳市鵬和科技有限公司	BLS6G3135S-20	NXP	24+	SMD	5000	只做原裝公司現(xiàn)貨	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	BLS6G2735LS-30	NXP	24+	SMD	1680	NXP專營品牌進(jìn)口原裝現(xiàn)貨假一賠十	詢價(jià)
綠盛電子(香港)有限公司	BLS6G2731-6G112	NXP	2018+		26976	代理原裝現(xiàn)貨/特價(jià)熱賣!	詢價(jià)
深圳市寶芯創(chuàng)電子有限公司	BLS6G3135S-120	NXP/恩智浦	18+	SOT502	12500	全新原裝正品,本司專業(yè)配單,大單小單都配	詢價(jià)
深圳市納立科技有限公司	BLS6G2731-120	NXP	三年內(nèi)		1983	只做原裝正品	詢價(jià)
深圳市粵駿騰電子科技有限公司	BLS6G2731S-120	NXP/恩智浦	24+		288	現(xiàn)貨供應(yīng)	詢價(jià)
深圳市歐亞佳電子有限公司	BLS6G3135S-120	NXP	20+	SMD	11520	特價(jià)全新原裝公司現(xiàn)貨	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	BLS6G2731-120,112	NXP	22+	SOP	9852	只做原裝正品現(xiàn)貨!或訂貨假一賠十!	詢價(jià)

更多BLS6供應(yīng)商更新時(shí)間2025-1-10 14:22:00

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