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BFY193

HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.3dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BFY193

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY193ES

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY193H

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY193P

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY193S

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY196

HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=6.5GHz,F=3dBat2GHz ?ESAQualificationpending

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BFY196

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=6,5GHz F=3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.:5

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY196H

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=6,5GHz F=3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.:5

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY196P

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=6,5GHz F=3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.:5

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY196S

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=6,5GHz F=3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.:5

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY193

HiRel NPN Silicon RF Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY193_11

HiRel NPN Silicon RF Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY196

HiRel NPN Silicon RF Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY196_11

HiRel NPN Silicon RF Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY193PZZZA1

包裝:卷帶(TR) 封裝/外殼:MICRO-X1 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 射頻 描述:RF TRANS NPN 12V 7.5GHZ MICRO X1

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    BFY19

  • 制造商:

    INFINEON

  • 制造商全稱(chēng):

    Infineon Technologies AG

  • 功能描述:

    HiRel NPN Silicon RF Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
INFINEON
1503+
MICRO-X1
3000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢價(jià)
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細(xì)信息,
詢價(jià)
Infineon Technologies
24+
原裝
5000
原裝正品,提供BOM配單服務(wù)
詢價(jià)
Infineon Technologies
2022+
MICRO-X1
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
詢價(jià)
INFINEON
22+
CG-UX-4
8000
終端可免費(fèi)供樣,支持BOM配單
詢價(jià)
INFINEON
23+
--
14253
原包裝原標(biāo)現(xiàn)貨,假一罰十,
詢價(jià)
INFINEON
23+
CG-UX-4
8000
只做原裝現(xiàn)貨
詢價(jià)
INFINEON
23+
CG-UX-4
7000
詢價(jià)
MOT/ST/PH
2339+
CAN6
13523
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
詢價(jià)
更多BFY19供應(yīng)商 更新時(shí)間2024-12-28 9:02:00