| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
BD650F | isc Silicon PNP Darlington Power Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
NPNSiliconGermaniumRFTransistor ProductBrief TheBFP650isahighlinearitywidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=150mA.With | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconGermaniumRFTransistor NPNSiliconGermaniumRFTransistor Preliminarydata ?Forhighpoweramplifiers ?Idealforlowphasenoiseoscilators ?Maxim.availableGainGma=21dBat1.8GHz NoisefigureF=0.9dBat1.8GHz ?Goldmetallizationforhighreliability ?70GHzfT-SiliconGermaniumtechnology. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HighLinearityLowNoiseSiGe:CNPNRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HighLinearitySiliconGermaniumBipolarRFTransistor ProductBrief TheBFP650isahighlinearitywidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=150mA.With | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconGermaniumRFTransistor LinearLowNoiseSiGe:CBipolarRFTransistor ?Formediumpoweramplifiersanddriverstages ?BasedonInfineonsreliablehighvolumeSilicon Germaniumtechnology ?HighOIP3andP-1dB ?Idealforlowphasenoiseoscilators ?Maxim.availableGainG ma=21.5dBat1.8GHz Mini | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LinearLowNoiseSiGe:CBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
EC-motorwithplanetarygearunitforautomaticspindlepositioningcycles | IVOBaomeng Electronics (Shanghai) Co., Ltd 堡盟電子堡盟電子（上海）有限公司 | IVO | ||
BandpassFilter | MINI Mini-Circuits | MINI | ||
BandpassFilter | MINI Mini-Circuits | MINI | ||
ULTRA-FASTRECOVERY8AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISP.C.BOARDMOUNTING | edi Electronic devices inc. | edi | ||
SmartHighsideHighCurrentPowerSwitch(OverloadprotectionCurrentlimitationShortcircuitprotectionOvertemperatureprotection) GeneralDescription NchannelverticalpowerFETwithchargepump,currentcontrolledinputanddiagnosticfeedbackwithloadcurrentsense,integratedinSmartSIPMOS?chiponchiptechnology.Fullyprotectedbyembeddedprotectionfunctions. Features ?Overloadprotection ?Currentlimitatio | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
SmartHighsideHighCurrentPowerSwitch GeneralDescription NchannelverticalpowerFETwithchargepump,currentcontrolledinputanddiagnosticfeedbackwithloadcurrentsense,integratedinSmartSIPMOS?chiponchiptechnology.Providingembeddedprotectivefunctions. Features ?Overloadprotection ?Currentlimitation ?Shor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SiliconNPNHighVoltageSwitchingTransistor Features ●Simple-sWitch-OffTransistor(SWOT) ●HIGHSPEEDtechnology ●Planarpassivation ●100kHzswitchingrate ●Verylowswitchinglosses ●Verylowdynamicsaturation ●Verylowoperatingtemperature ●OptimizedRBSOA ●Highreversevoltage Applications Electroniclampballas | Temic TEMIC Semiconductors | Temic | ||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=400V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):0.2V(Max)@IC=1.6A APPLICATIONS ·Electroniclampballastcircuits ·Switch-modepowersupplies | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
BZP650 | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
500WATTS(AC)DC/DCSINGLEOUTPUT Features ?SingleOutput ?3Ux42TEx166.5mm ?Weight:3.5kg | POWERBOX Powerbox manufactures | POWERBOX | ||
TransientBlockingUnits-TBU??Devices | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
ChipSchottkyBarrierRectifier | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
NPNSILICONPLANAREPITAXIALTRANSISTORS | CDIL Continental Device India Limited | CDIL |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-P+Darl+Di
- 性質(zhì)：
LSO
- 封裝形式：
直插封裝
- 極限工作電壓：
100V
- 最大電流允許值：
8A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
BDT62AF,BDT62BF,BDT62CF,2SB1020,2SB1283,
- 最大耗散功率：
>20W
- 放大倍數(shù)：
- 圖片代號：
B-10
- vtest：
100
- htest：
999900
- atest：
8
- wtest：
20.0001
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NXP |
23+ |
TO-220F |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
NXP |
2023+ |
TO-220F |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
NXP/恩智浦 |
23+ |
TO-220F |
10000 |
公司只做原裝正品 |
詢價 | ||
ST/意法 |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
NXP/恩智浦 |
2022+ |
TO-220F |
12888 |
原廠代理 終端免費提供樣品 |
詢價 | ||
NXP |
TO-220F |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
NXP/恩智浦 |
23+ |
TO-TO-220F |
53200 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價 | ||
ST/意法 |
22+ |
TO-220F |
50000 |
只做原裝假一罰十,歡迎咨詢 |
詢價 | ||
ST |
22+ |
TO-220F |
66900 |
原廠原裝現(xiàn)貨 |
詢價 | ||
ST |
23+ |
TO-220F |
16900 |
正規(guī)渠道,只有原裝! |
詢價 |
