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BD249B

Silicon NPN Power Transistor

DESCRIPTION ?CollectorCurrent-lc=25A ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=45V(Min)-BD249;60V(Min)-BD249A 80V(Min)-BD249B;100V(Min)-BD249C ?ComplementtoTypeBD250/A/B/C APPLICATIONS ?Designedforuseingeneralpurposepoweramplifie

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD249B

POWER TRANSISTORS(25A,125W)

COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

BD249B

NPN SILICON POWER TRANSISTORS

●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINN

Power Innovations Ltd

BD249B

NPN SILICON POWER TRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Electronic Solutions

伯恩斯

BD249B

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBD250/A/B/C ·125Wat25°Ccasetemperature ·25Acontinuouscollectorcurrent

SAVANTIC

Savantic, Inc.

BD249B

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBD250/A/B/C ·125Wat25°Ccasetemperature ·25Acontinuouscollectorcurrent

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BD249B

NPN SILICON POWER TRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Electronic Solutions

伯恩斯

BD249B

Silicon NPN Power Transistors

SAVANTIC

Savantic, Inc.

BD249B-S

包裝:管件 封裝/外殼:TO-218-3 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS NPN 80V 25A SOT93

Bourns Inc.

Bourns Inc.

Bourns Inc.

BD249C

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Electronic Solutions

伯恩斯

BD249C

POWERTRANSISTORS(25A,125W)

COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

BD249C

NPNSILICONPOWERTRANSISTORS

●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINN

Power Innovations Ltd

BD249C

NPNHigh??owerTransistor

NPNHigh?PowerTransistor NPNhigh?powertransistorsareforgeneral?purposepoweramplifierandswitchingapplications. Features ?ESDRatings:MachineModel,C;>400V HumanBodyModel,3B;>8000V ?EpoxyMeetsUL94V?0@0.125 ?Pb?FreePackageisAvailable*

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BD249C

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBD250/A/B/C ·125Wat25°Ccasetemperature ·25Acontinuouscollectorcurrent

SAVANTIC

Savantic, Inc.

BD249C

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBD250/A/B/C ·125Wat25°Ccasetemperature ·25Acontinuouscollectorcurrent

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BD249C

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

BD249C

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Electronic Solutions

伯恩斯

BD249C

SiliconNPNPowerTransistor

DESCRIPTION ?CollectorCurrent-lc=25A ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=45V(Min)-BD249;60V(Min)-BD249A 80V(Min)-BD249B;100V(Min)-BD249C ?ComplementtoTypeBD250/A/B/C APPLICATIONS ?Designedforuseingeneralpurposepoweramplifie

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD249CG

NPNHigh??owerTransistor

NPNHigh?PowerTransistor NPNhigh?powertransistorsareforgeneral?purposepoweramplifierandswitchingapplications. Features ?ESDRatings:MachineModel,C;>400V HumanBodyModel,3B;>8000V ?EpoxyMeetsUL94V?0@0.125 ?Pb?FreePackageisAvailable*

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BD249-S

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Electronic Solutions

伯恩斯

晶體管資料

  • 型號(hào):

    BD249B

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    低頻或音頻放大 (LF)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    80V

  • 最大電流允許值:

    25A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    BD257/80,TIP35B,3DD71C,

  • 最大耗散功率:

    125W

  • 放大倍數(shù):

  • 圖片代號(hào):

    B-62

  • vtest:

    80

  • htest:

    999900

  • atest:

    25

  • wtest:

    125

詳細(xì)參數(shù)

  • 型號(hào):

    BD249B

  • 功能描述:

    兩極晶體管 - BJT 125W NPN Silicon

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
TO-3PN
10000
全新
詢(xún)價(jià)
MOT
2020+
TO-247
25
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢(xún)價(jià)
ST
24+
TO-218
15000
原裝現(xiàn)貨熱賣(mài)
詢(xún)價(jià)
BOURNS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢(xún)價(jià)
FAIRCHI
21+
TO-3P
12588
原裝正品,自己庫(kù)存 假一罰十
詢(xún)價(jià)
MOT
2021++
原廠原裝
5850
ELE優(yōu)勢(shì)庫(kù)存國(guó)外貨源
詢(xún)價(jià)
ST/意法
23+
TO-3P
16330
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道??商峁┐罅繋?kù)存,詳
詢(xún)價(jià)
N/A
23+
原廠封裝
5177
現(xiàn)貨
詢(xún)價(jià)
MOTOROLA/摩托羅拉
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢(xún)價(jià)
MOTOROLA/摩托羅拉
2022
TO-247
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún)
詢(xún)價(jià)
更多BD249B供應(yīng)商 更新時(shí)間2024-12-28 16:00:00