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BD246A

PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS

PNPSINGLE-DIFFUSEDMESASILICONPOWERTRANSISTORS TheBD246seriesarePNPpowertransistorsinaTO3PNenvelope. Theyarethepowertransistorsforpoweramplifierandhigh-speed-switchingapplications. ThecomplementaryisBD245,A,B,C CompliancetoRoHS.

COMSET

Comset Semiconductor

BD246A

isc Silicon PNP Power Transistor

DESCRIPTION ?WithTO-3PNpackage ?ComplementtotypeBD249/A/B/C ?125Wat25°Ccasetemperature ?25Acontinuouscollectorcurrent

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD246A

Silicon PNP Power Transistor

DESCRIPTION ?CollectorCurrent-IC=-10A ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=-45V(Min)-BD246;-60V(Min)-BD246A -80V(Min)-BD246B;-100V(Min)-BD246C ?ComplementtoTypeBD245/A/B/C APPLICATIONS ?Designedforuseingeneralpurposepoweramp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD246A

PNP SILICON POWER TRANSISTORS

●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINN

Power Innovations Ltd

BD246A

PNP SILICON POWER TRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

TRSYS

Transys Electronics

BD246A

PNP SILICON POWER TRANSISTORS

●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Electronic Solutions

伯恩斯

BD246A

Silicon PNP Power Transistors

DESCRIPTION ?WithTO-3PNpackage ?ComplementtotypeBD249/A/B/C ?125Wat25°Ccasetemperature ?25Acontinuouscollectorcurrent

SAVANTIC

Savantic, Inc.

BD246A

Silicon NPN Power Transistors

SAVANTIC

Savantic, Inc.

BD246A-S

包裝:管件 封裝/外殼:TO-218-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個 描述:TRANS PNP 60V 10A SOT93

Bourns Inc.

Bourns Inc.

Bourns Inc.

BD246B

PNPSILICONPOWERTRANSISTORS

●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINN

Power Innovations Ltd

BD246B

PNPSILICONPOWERTRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

TRSYS

Transys Electronics

BD246B

PNPSILICONPOWERTRANSISTORS

●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Electronic Solutions

伯恩斯

BD246B

SiliconPNPPowerTransistors

DESCRIPTION ?WithTO-3PNpackage ?ComplementtotypeBD249/A/B/C ?125Wat25°Ccasetemperature ?25Acontinuouscollectorcurrent

SAVANTIC

Savantic, Inc.

BD246B

iscSiliconPNPPowerTransistor

DESCRIPTION ?WithTO-3PNpackage ?ComplementtotypeBD249/A/B/C ?125Wat25°Ccasetemperature ?25Acontinuouscollectorcurrent

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD246B

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

BD246B

PNPSINGLE-DIFFUSEDMESASILICONPOWERTRANSISTORS

PNPSINGLE-DIFFUSEDMESASILICONPOWERTRANSISTORS TheBD246seriesarePNPpowertransistorsinaTO3PNenvelope. Theyarethepowertransistorsforpoweramplifierandhigh-speed-switchingapplications. ThecomplementaryisBD245,A,B,C CompliancetoRoHS.

COMSET

Comset Semiconductor

BD246B

SiliconPNPPowerTransistor

DESCRIPTION ?CollectorCurrent-IC=-10A ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=-45V(Min)-BD246;-60V(Min)-BD246A -80V(Min)-BD246B;-100V(Min)-BD246C ?ComplementtoTypeBD245/A/B/C APPLICATIONS ?Designedforuseingeneralpurposepoweramp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD246C

PNPSILICONPOWERTRANSISTORS

●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINN

Power Innovations Ltd

BD246C

PNPSILICONPOWERTRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

TRSYS

Transys Electronics

BD246C

PNPSILICONPOWERTRANSISTORS

●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Electronic Solutions

伯恩斯

晶體管資料

  • 型號:

    BD246A

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-PNP

  • 性質(zhì):

    低頻或音頻放大 (LF)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    10A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    BD250A,BD214/60,BD258/60,TIP34A,3CD10C,

  • 最大耗散功率:

    80W

  • 放大倍數(shù):

  • 圖片代號:

    B-62

  • vtest:

    60

  • htest:

    999900

  • atest:

    10

  • wtest:

    80

詳細參數(shù)

  • 型號:

    BD246A

  • 功能描述:

    兩極晶體管 - BJT 80W PNP Silicon

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
TO-3PN
10000
全新
詢價
ST
24+
TO-218
15000
原裝現(xiàn)貨熱賣
詢價
BOURNS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
ST/意法
23+
TO-3P
10000
公司只做原裝正品
詢價
ST
22+
TO-3P
6000
十年配單,只做原裝
詢價
pi
24+
500000
行業(yè)低價,代理渠道
詢價
N/A
23+
原廠封裝
5177
現(xiàn)貨
詢價
ST
22+
TO-218
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
詢價
ST
22+
TO-3P
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
ST
24+
TO-3P
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
更多BD246A供應(yīng)商 更新時間2024-12-28 16:00:00