首頁 >BD138(-6...-10)>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
PlasticMediumPowerSiliconPNPTransistor PlasticMediumPowerSiliconPNPTransistor Thisseriesofplastic,medium?powersiliconPNPtransistorsaredesignedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features ?Pb?FreePackagesareAvailable* ?DCCurrentGain?hFE=40(Min)@ | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
PlasticMedium-PowerSiliconPNPTransistors | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
TO-126Plastic-EncapsulateTransistors FEATURES HighCurrent ComplementToBD135,BD137AndBD139 | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
N-ChannelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海貝嶺上海貝嶺股份有限公司 | Belling | ||
BandpassFilter | MINI Mini-Circuits | MINI | ||
BandpassFilter | MINI Mini-Circuits | MINI | ||
N-CHANNELENHANCEMENTMODEVERTICALDMOSFET SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET PARTMARKINGDETAIL–SS | Zetex Zetex Semiconductors | Zetex | ||
SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel) SIPMOS?Small-SignalTransistor ?Nchannel ?Enhancementmode ?LogicLevel ?VGS(th)=0.8...2.0V | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
SmallSignalMOSFETN-Channel Features: *LowOn-Resistance:3.5Ω *LowInputCapacitance:40PF *LowOutputCapacitance:12PF *LowThreshole:1.5V *FastSwitchingSpeed:20ns Application: *DCtoDCConverter *Cellular&PCMCIACard *CordlessTelephone *PowerManagementinPortableandBatteryetc. | WEITRON Weitron Technology | WEITRON | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
DirectLogic-LevelInterface:TTL/CMOS GENERALFEATURES ●VDS=50V,ID=0.22A RDS(ON) | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司 | SILIKRON | ||
N-CHANNELLOGICLEVELENHANCEMENTMODE ■DESCRIPTION ThisdeviceemploysadvancedMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowon-resistance. Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfrequencies. ■FEATURES | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
NCEN-ChannelEnhancementModePowerMOSFET GENERALFEATURES ●VDS=50V,ID=0.22A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
50VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?RDS(ON),VGS@2.5V,IDS@100mA=6Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystem | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchild’sproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theseprod | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
N-ChannelEnhancementModeFieldEffectTransistor Features ?50V,0.22A, RDS(ON)=3.5?@VGS=10V RDS(ON)=6.0?@VGS=4.5V ?HighdensitycelldesignforlowRDS(ON). ?RuggedandReliable. ?SOT-23package | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?TheBSS138Qissuitableforautomotive | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4) ?QualifiedtoAEC-Q101StandardsforHighReliability | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELMOSFETinaSOT-23PlasticPackage Descriptions N-CHANNELMOSFETinaSOT-23PlasticPackage. Features LowRDS(on),ruggedandreliable,compactindustrystandardSOT-23surfacemountpackage. Applications Lowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andotherswitchingapplicatio | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍箭電子佛山市藍箭電子股份有限公司 | FOSHAN | ||
N-Channel60-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?1200VESDProtection ?ComplianttoRoHSDirective2002/95/EC BENEFITS ?Low | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-PNP
- 性質：
低頻或音頻放大 （LF）_功率放大 （L）
- 封裝形式：
直插封裝
- 極限工作電壓：
60V
- 最大電流允許值：
1.5A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
BD168,BD178,BD229,BD236,BD440,3CA4C,
- 最大耗散功率：
12.5W
- 放大倍數(shù)：
- 圖片代號：
B-21
- vtest：
60
- htest：
999900
- atest：
1.5
- wtest：
12.5
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
PH/ST |
23+ |
TO-126 |
8000 |
原廠授權代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價 | ||
PH/ST |
23+ |
SOIC-8 |
5177 |
現(xiàn)貨 |
詢價 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
PHILIPS |
2023+ |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | |||
PHILIPS |
23+ |
原廠正規(guī)渠道 |
5000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
PHILIPS |
23+ |
原廠正規(guī)渠道 |
5000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
FAIRCHI |
2020+ |
TO-126 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
FAIRCHILD/仙童 |
24+ |
TO-126 |
15000 |
原裝正品現(xiàn)貨 |
詢價 | ||
PHILIPS |
24+ |
35200 |
一級代理/放心采購 |
詢價 | |||
FAIRCHILD |
21+ |
TO-126 |
1684 |
原裝現(xiàn)貨假一賠十 |
詢價 |
