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BB106A

Silicljeve planarne signalne diode Silicon planar signal diodes

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

BDB106

SINGLE-PHASEGLASSPASSIVATEDSILICONBRIDGERECTIFIER

RECTRON

Rectron Semiconductor

BFR106

NPN5GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorinaplasticSOT23envelope.Itisprimarilyintendedforlownoise,generalRFapplications.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFR106

NPNSiliconRFTransistor(Forlownoise,high-gainamplifiersForlinearbroadbandamplifiers)

NPNSiliconRFTransistor ?Forlownoise,high-gainamplifiers ?Forlinearbroadbandamplifiers ?Specialapplication:antennaamplifiers ?Complementarytype:BFR194(PNP)

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BFR106

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?HighlinearitylownoiseRFtransistor ?22dBmOP1dBand31dBmOIP3@900MHz,8V,70mA ?ForUHF/VHFapplications ?Driverformultistageamplifiers ?Forlinearbroadbandandantennaamplifiers ?Collectordesignsupports5Vsupplyvoltage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR106

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR106

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR106

SiliconNPNRFTransistor

DESCRIPTION ?LowNoiseFigure NF=2.5dBTYP.@VCE=8V,IC=20mA,f=900MHz ?HighGain ︱S21e︱2=10.5dBTYP.@VCE=8V,IC=70mA,f=900MHz APPLICATIONS ?Designedforuseinlownoise,high-gainamplifiersandlinearbroadbandamplifiers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BFR106

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFR106

LowNoiseFigure

DESCRIPTION ?LowNoiseFigure NF=2.5dBTYP.@VCE=8V,IC=20mA,f=900MHz ?HighGain ︱S21e︱2=10.5dBTYP.@VCE=8V,IC=70mA,f=900MHz APPLICATIONS ?Designedforuseinlownoise,high-gainamplifiersandlinearbroadbandamplifiers.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BFR106

NPN5GHzwidebandtransistor

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BGF106C

SIMCardInterfaceFilterandESDProtection

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BR106

SINGLE-PHASESILICONBRIDGERECTIFIER

RECTRON

Rectron Semiconductor

BR106

10ASINGLE-PHASESILICONBRIDGE

SEMTECH

Semtech Corporation

BR106

SINGLEPHASE10AMPBRIDGERECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT10.0Amperes FEATURES *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any

BYTES

Bytes

BR106

TECHNICALSPECIFICATIONSOFSINGLE-PHASESILICONBRIDGERECTIFIER

VOLTAGERANGE-50to1000VoltsCURRENT-10Amperes FEATURES *Surgeoverloadrating:200Amperespeak *Lowforwardvoltagedrop

DCCOM

Dc Components

BR106

SINGLEPHASE10AMPBRIDGERECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT10.0Amperes FEATURES *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

BR106

SINGLE-PHASESILICONBRIDGE

VOLTAGERANGE50to1000VoltsCURRENT10.0Amperes FEATURES *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any

Good-Ark

GOOD-ARK Electronics

BR106

SINGLE-PHASESILICONBRIDGERECTIFIER

VOLTAGE:50-1000VCURRENT:10.0A FEATURES ?Surgeoverloadratings-250Amperes ?Lowforwardvoltagedrop

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實(shí)業(yè)重慶平偉實(shí)業(yè)股份有限公司

BR106

SINGLEPHASE10AMPBRIDGERECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT10.0Amperes FEATURES *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any

UNIOHMUniohm

臺(tái)灣厚聲

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THOMSON
23+
NA
12486
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PHI
05+
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50051
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23+
2282
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THOM
23+
30000
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THOM
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92
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THOM
92
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5177
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THOM
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1054
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THOM
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SM-
10000
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SILICON
23+
QFN20
3000
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更多BB106A供應(yīng)商 更新時(shí)間2025-1-7 17:00:00