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ACDBTS1100R-HF

Marking：B10；Package：SOD-123F；SMD Schottky Barrier Diode

Features -Lowforwardvoltage. -Designedformountingonsmallsurface. -Lowreversecurrent. -AEC-Q101Qualified&PPAP.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBTS1100R-HF

Marking：B10；Package：SOD-123F；SMD Schottky Barrier Diode

Features -Lowforwardvoltage. -Designedformountingonsmallsurface. -Lowreversecurrent.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

EMB10

Marking：B10；Package：EMT6；General purpose (dual digital transistors)

Features 1)TwoDTA123JchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFACE,DRIVE

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

EMB10FHA

Marking：B10；Package：EMT6；PNP -100mA -50V Complex Digital Transistors

lFeatures 1)Built-InBiasingResistors. 2)TwoDTA123Jchipsinonepackage. 3)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 4)Thebiasresistorsconsistofthin-filmresistors withcompleteisolat

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

IMB10A

Marking：B10；Package：SOT-26；General purpose (dual digital transistors)

Features 1)TwoDTA123JchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFACE,DRIVE

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

IMB10AFRA

Marking：B10；Package：SMT6；PNP -100mA -50V Complex Digital Transistors

lFeatures 1)Built-InBiasingResistors. 2)TwoDTA123Jchipsinonepackage. 3)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 4)Thebiasresistorsconsistofthin-filmresistors withcompleteisolat

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

UMB10N

Marking：B10；Package：SOT-363；General purpose (dual digital transistors)

Features 1)TwoDTA123JchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFACE,DRIVE

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

UMB10NFHA

Marking：B10；Package：UMT6；PNP -100mA -50V Complex Digital Transistors

lFeatures 1)Built-InBiasingResistors. 2)TwoDTA123Jchipsinonepackage. 3)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 4)Thebiasresistorsconsistofthin-filmresistors withcompleteisolat

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

EMB10

Marking：B10；Package：EMT6；General purpose (dual digital transistors)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

EMB10

Marking：B10；Package：EMT6；General purpose Dual digital transistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    B10

  • 制造商：

    Xytronic Industries

  • 功能描述：

    TIP SCREWDRIVER 4.8MM

  • 制造商：

    Thomas & Betts

  • 制造商：

    PACIFIC

  • 功能描述：

    RESISTOR, WIRE WOUND, 7 W, 0.02, 0.05, 0.1, 0.25, 0.5, 1, 3, 5 %, 20, 50, 90 ppm, 1 ohm - 96000 ohm, THROUGH HOLE MOUNT

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群鑫
22+
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30000
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1767
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23+
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TOKO
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791
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17+
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6200
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3260
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更多B10供應(yīng)商 更新時(shí)間2025-6-21 9:31:00

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