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BQ3055

2-Series,3-Series,and4-SeriesLi-IonBatteryPackManager

TITexas Instruments

德州儀器美國(guó)德州儀器公司

BQ3055

2-Series,3-Series,and4-SeriesLi-IonBatteryPackManager

TI1Texas Instruments

德州儀器

BQ3055DBT

2-Series,3-Series,and4-SeriesLi-IonBatteryPackManager

TITexas Instruments

德州儀器美國(guó)德州儀器公司

BQ3055DBT

CEDVGasGaugeandBatteryPackManager

TI1Texas Instruments

德州儀器

BQ3055DBTR

2-Series,3-Series,and4-SeriesLi-IonBatteryPackManager

TITexas Instruments

德州儀器美國(guó)德州儀器公司

BQ3055DBTR

CEDVGasGaugeandBatteryPackManager

TI1Texas Instruments

德州儀器

BQ3055EVM

EvaluationKit

INTRODUCTION ThiskitcontainseverythingneededforrapidprototypingwiththeSA310KR3-phasedriver.Withamultitude ofcircuitoptions,theEK76offersversatilitywhenincomestoconnectinginputs,measuringoutputs, andconditioningsignalstothespecificapplicationenvironment.High-

Apex

Cirrus Logic

BX3055

RFAMPLIFIERMODEL

APITECH

API Technologies Corp

CEA3055

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ?60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. ?HighdensecelldesignforlowRDS(ON) ?Ruggedandreliable. ?SOT-89Package

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEA3055

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

CEA3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ?60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. ?HighdensecelldesignforlowRDS(ON) ?Ruggedandreliable. ?SOT-89Package

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEA3055L

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

CED3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,8A,RDS(ON)=150mΩ@VGS=10V. RDS(ON)=180mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET3055

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●60V,4A,RDS(ON)=100mΩ@VGS=10V. ●HighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-223Package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. ●HighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-223Package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,8A,RDS(ON)=150mΩ@VGS=10V. RDS(ON)=180mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM3055LAPAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT12Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CHM3055LXPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT3.7Ampere FEATURE *Smallpackage.(SC-62/SOT-89) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CHM3055ZPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT4.0Ampere FEATURE *Smallpackage.(SC-73/SOT-223) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CHT3055ZPT

NPNSILICONTransistor

CHENMKOchenmko

力勤股份有限公司

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更多AXX3055供應(yīng)商 更新時(shí)間2024-12-26 15:00:00