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AUIRG4BC30S-S

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

AUIRG4BC30S-SL

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

AUIRG4BC30U-S

INSULATEDGATEBIPOLARTRANSISTOR

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching, >200kHzinresonantmode ?IndustrystandardD2Pak&TO-262package ?Lead-Free,RoHSCompliant ?AutomotiveQualified* Benefits ?TypicalApplications:SMPS,PFC

IRF

International Rectifier

AUIRG4BC30U-SL

INSULATEDGATEBIPOLARTRANSISTOR

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching, >200kHzinresonantmode ?IndustrystandardD2Pak&TO-262package ?Lead-Free,RoHSCompliant ?AutomotiveQualified* Benefits ?TypicalApplications:SMPS,PFC

IRF

International Rectifier

AUIRG4BC30USTRL

INSULATEDGATEBIPOLARTRANSISTOR

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching, >200kHzinresonantmode ?IndustrystandardD2Pak&TO-262package ?Lead-Free,RoHSCompliant ?AutomotiveQualified* Benefits ?TypicalApplications:SMPS,PFC

IRF

International Rectifier

AUIRG4BC30USTRR

INSULATEDGATEBIPOLARTRANSISTOR

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching, >200kHzinresonantmode ?IndustrystandardD2Pak&TO-262package ?Lead-Free,RoHSCompliant ?AutomotiveQualified* Benefits ?TypicalApplications:SMPS,PFC

IRF

International Rectifier

G4BC30KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRF

International Rectifier

G4BC30UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

G4BC30W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesign

IRF

International Rectifier

G4BC30W

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

G4BC30W

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-s

IRF

International Rectifier

IRG4BC30

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious

IRF

International Rectifier

IRG4BC30

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Benefits ?Generation4IGBTsoff

IRF

International Rectifier

IRG4BC30F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Benefits ?Generation4IGBTsoff

IRF

International Rectifier

IRG4BC30F

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30F

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30FD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-s

IRF

International Rectifier

IRG4BC30FDPBF

FastCoPack1GBT(VCES=600V,VCE(on)typ.=1.59V,VGE=15V,IC=17A)

FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythan

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號:

    AUIRG4BC30S-S

  • 功能描述:

    IGBT 晶體管 600V AUTO DC-1 KHZ DISCRETE IGBT

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon Technologies
23+
TO-263
13000
15年原裝正品企業(yè)
詢價
Infineon
18+
NA
3628
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190
詢價
IR
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
INFINEON/英飛凌
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
INFINEON
1503+
TO-263
3000
就找我吧!--邀您體驗愉快問購元件!
詢價
IR
23+
D2PAK
10000
公司只做原裝正品
詢價
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細(xì)信息,
詢價
IR
22+
D2PAK
6000
十年配單,只做原裝
詢價
IR
23+
D2PAK
43000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳
詢價
IR
23+
D2PAK
6000
原裝正品,支持實(shí)單
詢價
更多AUIRG4BC30S-S供應(yīng)商 更新時間2024-10-26 15:00:00