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APL1001J

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWERMOSIV?SINGLEDIEISOTOP?PACKAGE

ADPOW

Advanced Power Technology

APL1001J

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

ADPOW

Advanced Power Technology

APL1001J_02

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

ADPOW

Advanced Power Technology

APL1001P

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV?SINGLEDIEISOTOP?PACKAGE

ADPOW

Advanced Power Technology

APN1001

CircuitModelsforPlasticPackagedMicrowaveDiodes

Introduction Discrete,low-cost,surfacemountsemiconductordiodesareattractivechoicesforUHFandmicrowaveapplicationswherepackageparasiticmayhaveasignificantimpactonperformance.ThemostcommonpackagestylesaretheSOT-23andtheSOD-323(Figure1)whichwereneitherdesigne

SKYWORKSSkyworks Solutions Inc.

思佳訊美國(guó)思佳訊公司

APT1001

PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs

PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally

ADPOW

Advanced Power Technology

APT1001RAN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1001RBLC

PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs

PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally

ADPOW

Advanced Power Technology

APT1001RBN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1001RBN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    APL1001J

  • 功能描述：

    MOSFET N-CH 1000V 18A SOT-227

  • RoHS：

    是

  • 類別：

    半導(dǎo)體模塊 >> FET

  • 系列：

    -

  • 標(biāo)準(zhǔn)包裝：

    10

  • 系列：

    *

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
APT
19+
MODULE
1290
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126
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APT
23+
模塊
362
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 詢價(jià)
MicrosemiPowerProductsGr
23+
MOSFETN-CH1000V18ASOT-22
1733
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
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APT
22+
ISOTOPFONT
8200
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!!
 詢價(jià)
Microch
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NA
33560
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APT
2023+
MODULE
80000
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APT
24+
SOT227
2050
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨
 詢價(jià)
APT
2020+
NA
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
APT
24+
SOT227
564
詢價(jià)
Microsemi
1942+
N/A
98
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更多APL1001J供應(yīng)商 更新時(shí)間2025-2-27 15:14:00

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