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APT1001RBN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1001RBN

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1001RBNR

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1001RBVFR

POWERMOSVFREDFET

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?AvalancheEner

ADPOW

Advanced Power Technology

APT1001RBVFR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1001RBVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching

ADPOW

Advanced Power Technology

APT1001RSLC

PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs

PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally

ADPOW

Advanced Power Technology

APT1001RSVFR

POWERMOSVFREDFET

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?AvalancheEner

ADPOW

Advanced Power Technology

APT1001RSVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching

ADPOW

Advanced Power Technology

APT1001RSVR

100AvalancheTested

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT1001RSVRG

100AvalancheTested

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching

MicrosemiMicrosemi Corporation

美高森美美高森美公司

ARJ-1001

GIGABITRJ45LANMAGNETIC

ABRACON

Abracon Corporation

ASH1001

10mmwideIP67&IP68LEDlightstrip

OPTOSUPPLY

OptoSupply International

ASI1001

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASI1001isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: ?PG=12dBmin.at1.0W/1,000MHz ?HermeticMicrostripPackage ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

AT-1001

HighPowerFixedAttenuators(Radiatorbuilt-in)

HighPowerFixedAttenuators(Radiatorbuilt-in) ■Features 1.SmallSizeandEconomical Berylliaisusedforthematerialoftheresistanceelementtoenabletheterminationtobeofsmallsizeandlowcost. 2.ConnectorsUsed Inthecouplingportion,theAT-1000SerieshasanSMAt

HIROSEHirose Electric Company

廣瀨日本廣瀨電機(jī)株式會(huì)社

AXHS1001

PLLSynthesizerinSMDpackage

AXTALAdvanced XTAL Products

advanced XTAL Products

AXHV1001

VCO-VoltageControlledOscillator

AXTALAdvanced XTAL Products

advanced XTAL Products

B1001ERW

LowCost1x2Inch10WWideInputRangeDC/DCConverters

MPD

MPD (Memory Protection Devices)

B1001EWA

EVERLIGHTELECTRONICECO.,LTD.

ETCList of Unclassifed Manufacturers

未分類制造商

B1001R

10W,5VDCInputCompact,DualOutputDC/DCConverters

MPD

MPD (Memory Protection Devices)

詳細(xì)參數(shù)

  • 型號(hào)：

    APT1001RBN

  • 制造商：

    ADPOW

  • 制造商全稱：

    Advanced Power Technology

  • 功能描述：

    N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
APT
24+
8866
詢價(jià)
APT
23+
TO-3P
5000
原裝正品,假一罰十
 詢價(jià)
APT
23+
NA
1200
全新原裝假一賠十
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APT
22+
TO-3
8200
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢(shì)!!
 詢價(jià)
APT
22+
TO-247
2258
原裝優(yōu)勢(shì)!絕對(duì)公司現(xiàn)貨!
 詢價(jià)
APT
24+
TO-247
564
詢價(jià)
ADPOW
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
MICROSEMI
1503+
TO-247
3000
就找我吧!--邀您體驗(yàn)愉快問購元件!
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Microsemi Corporation
22+
TO2473
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
Microsemi Corporation
21+
TO2473
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
更多APT1001RBN供應(yīng)商 更新時(shí)間2024-10-27 16:30:00

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