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HMS110N04D

N-ChannelSuperTrenchPowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

NP110N04PDG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PDG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP110N04PUG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP110N04PUG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUJ

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP110N04PUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)=1.8mΩMAX.(VGS=10V,ID=55A) ?Lowinputcapacitance Ciss=9500pFTYP. ?Designedforautomotiveapplicati

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUJ

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUJ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP110N04PUK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP110N04PUK

MOSFIELDEFFECTTRANSISTOR

Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.4m?MAX.(VGS=10V,ID=55A) ?LowCiss:Ciss=10500pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUK

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUK

MOSFIELDEFFECTTRANSISTOR

Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=1.4mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplicatio

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

SUM110N04

N-Channel40-V(D-S)MOSFET

TFUNKVishay Telefunken

威世威世（VISHAY）集團(tuán)

YFW110N04AD

40VN-CHANNELENHANCEMENTMODEMOSFET

Application Batteryprotection Loadswitch Uninterruptiblepowersupply

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
APM
22+
TO-252-3L
280000
原裝進(jìn)口現(xiàn)貨支持實(shí)單
 詢價(jià)
APM
2023+
TO-252-3L
50000
AI智能識(shí)別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價(jià)
APM(永源微電子)
20+
TO-252-3
2500
詢價(jià)
24+
N/A
73000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
RFIC
23+
QFN8
7635
全新原裝優(yōu)勢(shì)
 詢價(jià)
RFIC
23+
QFN8
5000
原裝正品,假一罰十
 詢價(jià)
RFIC
23+
QFN
3200
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!
 詢價(jià)
RFIC
2020+
QFN
25
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
24+
QFN
1131
詢價(jià)
RFIC
1726+
QFN
6528
只做進(jìn)口原裝正品現(xiàn)貨,假一賠十!
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更多AP110N04D供應(yīng)商 更新時(shí)間2025-1-5 8:18:00

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