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NP110N04PUG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP110N04PUG

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUG_15

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUJ

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUJ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP110N04PUJ

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP110N04PUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)=1.8mΩMAX.(VGS=10V,ID=55A) ?Lowinputcapacitance Ciss=9500pFTYP. ?Designedforautomotiveapplicati

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP110N04PUK

MOSFIELDEFFECTTRANSISTOR

Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.4m?MAX.(VGS=10V,ID=55A) ?LowCiss:Ciss=10500pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUK

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP110N04PUK

MOSFIELDEFFECTTRANSISTOR

Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=1.4mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplicatio

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    NP110N04PUG

  • 制造商：

    Renesas Electronics Corporation

供應商型號品牌批號封裝庫存備注價格
NEC
2024
TO-263
503164
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力高端行業(yè)供應商
 詢價
24+
8866
詢價
NEC
23+
TO-263
11845
全新原裝
 詢價
NEC
6000
面議
19
TO-263
 詢價
NEC
22+
TO-263
36081
原裝正品現(xiàn)貨
 詢價
FAIRCHILD/仙童
23+
TO-252(DPAK)
69820
終端可以免費供樣,支持BOM配單!
 詢價
R
23+
TO-263
10000
公司只做原裝正品
 詢價
RENESAS/瑞薩
2022+
TO-263
50000
原廠代理 終端免費提供樣品
 詢價
NEC
16+
TO-263
146
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
NEC
TO-263
699839
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
更多NP110N04PUG供應商 更新時間2025-2-21 16:18:00

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