| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
AOT414 | 100V N-channel MOSFET | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | |
AOT414 | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.StandardProductAOU414isPb-free(meetsROHS&Sony25 | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.StandardProductAOU414isPb-free(meetsROHS&Sony25 | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
HIGHVOLTAGE,PHOTOMOSRELAY | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
HIGHVOLTAGE,PHOTOMOSRELAY | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26?)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
HIGHVOLTAGE,PHOTOMOSRELAY | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26?)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26?)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26?)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS |
詳細(xì)參數(shù)
- 型號：
AOT414
- 功能描述：
MOSFET N-CH 100V 43A TO-220
- RoHS：
是
- 類別：
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列：
SDMOS™
- 標(biāo)準(zhǔn)包裝：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金屬氧化物 FET
- 特點(diǎn)：
邏輯電平門
- 漏極至源極電壓(Vdss)：
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C：
18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫歐 @ 9A，10V Id 時(shí)的
- Vgs(th)（最大）：
4V @ 250µA 閘電荷(Qg) @
- Vgs：
72nC @ 10V 輸入電容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安裝類型：
通孔
- 封裝/外殼：
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝：
TO-220FP
- 包裝：
管件
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
AOS/萬代 |
2019+ |
NA |
3333 |
原廠渠道 可含稅出貨 |
詢價(jià) | ||
AOS/萬代 |
24+ |
TO-220 |
333888 |
專業(yè)直銷原裝AOS一系列可訂貨 |
詢價(jià) | ||
ALPHA |
2020+ |
TO220 |
120 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
ALPHA |
新 |
100 |
全新原裝 貨期兩周 |
詢價(jià) | |||
AOS |
23+ |
TO-220 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
AOS |
1844+ |
NA |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
AOS萬代 |
20+ |
TO-220 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價(jià) | ||
ALPHA |
2020+ |
TO220 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
只做原裝 |
24+ |
36520 |
一級代理/放心采購 |
詢價(jià) | |||
AOS/萬代 |
23+ |
TO-220 |
24190 |
原裝正品代理渠道價(jià)格優(yōu)勢 |
詢價(jià) |
相關(guān)規(guī)格書
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- AOW-4544P-C3310-B-R
- AOZ1015AI
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- AOZ1038PI
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- AP.10G.01
- AP.12F.07.0045A
- AP.17F.07.0064A
- AP.25F.07.0078A
- AP.35A.07.0054A
- AP/R/SWITCHED/VC
- AP00458
- AP00463
相關(guān)庫存
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- AOTF11N60L
- AOTF12T50P
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- AOV15S60
- AOW10T60P
- AOW-4544L-C3310-B-R
- AOWF10T60P
- AOZ1021AI
- AOZ1024DI
- AOZ1034DI
- AOZ1037PI
- AOZ1050PI
- AOZ1092DI
- AOZ1094DIL
- AOZ1210AI
- AOZ1212DI
- AOZ1232QI-01
- AOZ1280CI
- AOZ1282CI
- AOZ1360AIL
- AOZ8105CI
- AP.10E.07.0039B
- AP.10H.01
- AP.17E.07.0064A
- AP.25E.07.0054A
- AP.25M.07.0080A
- AP/HTC-200M
- AP/W/SWITCHED/VC
- AP00459
- AP015
