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AIHD06N60RF

IGBT with integrated diode in packages offering space saving advantage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

CJP06N60

PowerfiledEffectTransistor

FEATURES ◆RobustHighVoltageTermination ◆AvalancheEnergySpecified ◆Source-to-DrainDiodeRecoveryTimeComparabletoa DiscreteFastRecoveryDiode ◆DiodeisCharacterizedforUseinBridgeCircuits ◆IDSSandVDS(on)SpecifiedatElevatedTemperature

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CMT06N60

POWERFIELDEFFECTTRANSISTOR

CHAMPChampion Microelectronic Corp.

虹冠虹冠電子工業(yè)股份有限公司

CMT06N60

POWERFIELDEFFECTTRANSISTOR

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

CHAMPChampion Microelectronic Corp.

虹冠虹冠電子工業(yè)股份有限公司

CMT06N60

POWERFIELDEFFECTTRANSISTOR

ETCList of Unclassifed Manufacturers

未分類制造商

EMD06N60A

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMD06N60CS

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMD06N60F

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

FMC06N60ES

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FMC06N60ES

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會社

FMI06N60ES

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會社

FMP06N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會社

FMP06N60ES

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會社

FMP06N60ES

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FMV06N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會社

FMV06N60ES

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會社

FTA06N60C

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

H06N60

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

IGD06N60T

IGBTinTRENCHSTOPandFieldstoptechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IGP06N60T

LowLossIGBT:IGBTinTRENCHSTOP??andFieldstoptechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
23+
TO-252-3-313
2669
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價
Infineon(英飛凌)
2112+
PG-TO252-3-313
115000
2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
Infineon/英飛凌
21+
PG-TO252-3-313
6000
原裝現(xiàn)貨正品
 詢價
Infineon/英飛凌
21+
PG-TO252-3-313
10000
原裝,品質(zhì)保證,請來電咨詢
 詢價
Infineon/英飛凌
2021+
PG-TO252-3-313
9600
原裝現(xiàn)貨，歡迎詢價
 詢價
Infineon/英飛凌
23+
PG-TO252-3-313
25000
原裝正品,假一賠十!
 詢價
Infineon/英飛凌
2023+
PG-TO252-3-313
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
Infineon/英飛凌
21+
PG-TO252-3-313
6820
只做原裝,質(zhì)量保證
 詢價
Infineon/英飛凌
21+
PG-TO252-3-313
13880
公司只售原裝,支持實(shí)單
 詢價
Infineon/英飛凌
23+
PG-TO252-3-313
10000
原裝正品，支持實(shí)單
 詢價
更多AIHD06N60RF供應(yīng)商 更新時間2025-1-1 23:00:00

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