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AIHD15N60RF

Marking：AH15DRF；Package：PG-TO252-3；IGBT with integrated diode in packages offering space saving advantage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

CEB15N60LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB15N60SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED15N60LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,13.6A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED15N60SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V@TJmax,13.4A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF15N60LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF15N60SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP15N60LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP15N60SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU15N60LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,13.6A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Infineon(英飛凌)
24+
TO-252-3-313
2669
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價(jià)
INFINEON/英飛凌
23+
N/A
10000
只做原裝,實(shí)單最低價(jià)支持
 詢價(jià)
Infineon(英飛凌)
2447
PG-TO252-3-313
315000
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
Infineon/英飛凌
2021+
PG-TO252-3-313
9600
原裝現(xiàn)貨，歡迎詢價(jià)
 詢價(jià)
Infineon/英飛凌
24+
PG-TO252-3-313
25000
原裝正品,假一賠十!
 詢價(jià)
Infineon/英飛凌
24+
PG-TO252-3-313
6000
全新原裝深圳倉(cāng)庫現(xiàn)貨有單必成
 詢價(jià)
Infineon/英飛凌
21+
PG-TO252-3-313
6820
只做原裝,質(zhì)量保證
 詢價(jià)
Infineon/英飛凌
21+
PG-TO252-3-313
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
Infineon/英飛凌
23+
PG-TO252-3-313
10000
原裝正品，支持實(shí)單
 詢價(jià)
Infineon/英飛凌
23+
PG-TO252-3-313
25630
原裝正品
 詢價(jià)
更多AIHD15N60RF供應(yīng)商 更新時(shí)間2025-4-13 8:12:00

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