| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
AIWA-TV-A149 | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
HighPerformanceThermalPad Features ?Greatthermalconductivity ?Difficulttobedeformed ?Easytoassemble ?Twosidelowtack Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformanceComputing),Server,IC,CPU,MOS,LED, MotherBoard,PowerSupply | TGLOBAL T-Global Technology | TGLOBAL | ||
ThermalTape Features ?Goodadhesion(AcrylicPSA) ?Greatreliability ?Costeffectivewithgreatperformance ?Easytoassemble ?Customizationservicesfordifferentindustries Applications Electroniccomponents-ElectricVehicles,5G,AutopilotSystem,Mobile Phone,AIOT,HPC(HighPerformance | TGLOBAL T-Global Technology | TGLOBAL | ||
UHFvariablecapacitancediode DESCRIPTION TheBB149isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Theexcellentmatchingperformanceisachievedbyglidingmatchingandadirectmatchingassemblyprocedure.Theunmatchedtype,BB159hasthesa | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
UHFvariablecapacitancediode DESCRIPTION TheBB149isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Theexcellentmatchingperformanceisachievedbyglidingmatchingandadirectmatchingassemblyprocedure.Theunmatchedtype,BB159hasthesa | LRCLeshan Radio Company 樂山無線電樂山無線電股份有限公司 | LRC | ||
UHFvariablecapacitancediode | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
UHFvariablecapacitancediode DESCRIPTION TheBB149Aisaplanartechnologyvariablecapacitancediode,inaSOD323verysmallplasticSMDpackage.Theexcellentmatchingperformanceisachievedbyglidingmatchingandadirectmatchingassemblyprocedure. FEATURES ?Excellentlinearity ?Excellentmatchingto2DMA ?Ver | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
TRANZYSTORYNPN LowLevelandGeneralPurposeAmplifiers | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
LowLevelandGeneralPurposeAmplifiers | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor ?Switchingcircuit,inverter,interfacecircuit,drivercircuit ?Builtinbiasresistor(R1=47k?) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor ?Switchingcircuit,inverter,interfacecircuit,drivercircuit ?Builtinbiasresistor(R1=47k?) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor ?Switchingcircuit,inverter,interfacecircuit,drivercircuit ?Builtinbiasresistor(R1=47k?) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
PNP5GHzwidebandtransistor DESCRIPTION PNPtransistorinaSOT89envelope.ItisintendedforuseinUHFapplicationssuchasbroadbandaerialamplifiers(30to860MHz)andinmicrowaveamplifierssuchasradarsystems,spectrumanalyzers,etc.,usingSMDtechnology. | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
PNP5GHzwidebandtransistor DESCRIPTION PNPtransistorinaSOT89envelope.ItisintendedforuseinUHFapplicationssuchasbroadbandaerialamplifiers(30to860MHz)andinmicrowaveamplifierssuchasradarsystems,spectrumanalysers,etc.,usingSMDtechnology. | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
BLC149 | BellingSHANGHAI BELLING CO., LTD. 上海貝嶺上海貝嶺股份有限公司 | Belling | ||
SIPMOSSmall-SignalTransistor(NchannelDepletionmodeHighdynamicresistance) ●VDS200V ●ID0.48A ●RDS(on)3.5? ●Nchannel ●Depletionmode ●Highdynamicresistance ●AvailablegroupedinVGS(th) | SIEMENSSiemens Ltd 西門子德國西門子股份公司 | SIEMENS | ||
SIPMOSSmall-Signal-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Ge-PNP
- 性質(zhì)：
調(diào)幅 （AM）_調(diào)頻 （FM）_前置放大 （V）
- 封裝形式：
直插封裝
- 極限工作電壓：
- 最大電流允許值：
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
4
- 可代換的型號：
AF126,AF200,3AG54A,
- 最大耗散功率：
- 放大倍數(shù)：
- 圖片代號：
C-36
- vtest：
0
- htest：
999900
- atest：
0
- wtest：
0
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MATS/HIT |
22+ |
CAN4 |
25000 |
原裝現(xiàn)貨,價格優(yōu)惠,假一罰十 |
詢價 | ||
MATS/HIT |
23+ |
原裝正品現(xiàn)貨 |
10000 |
CAN4 |
詢價 | ||
新 |
5 |
全新原裝 貨期兩周 |
詢價 | ||||
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 | ||||
Avinic艾為 |
QFN 5x5-40 |
24+ |
4500 |
原裝現(xiàn)貨部分型號支持訂貨 |
詢價 | ||
ALFA-MOS |
23+ |
SOP-8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ALFA-MOS |
23+ |
SOP8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ALFA-MOS |
2022 |
SOP-8 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
ALFA-MOS |
23+ |
SOP8 |
28533 |
原盒原標(biāo),正品現(xiàn)貨 誠信經(jīng)營 價格美麗 假一罰十! |
詢價 | ||
ALFA-MOS |
11+ |
SOP8 |
4817 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 |
