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AD648K

DualPrecision,LowPowerBiFETOpAmp

PRODUCTDESCRIPTION TheAD648isamatchedpairoflowpower,precisionmonolithicoperationalamplifiers.Itoffersbothlowbiascurrent(10pAmax,warmedup)andlowquiescentcurrent(400μAmax)andisfabricatedwithion-implantedFETandlaserwafertrimmingtechnologies.Inputbiascur

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD648KN

DualPrecision,LowPowerBiFETOpAmp

PRODUCTDESCRIPTION TheAD648isamatchedpairoflowpower,precisionmonolithicoperationalamplifiers.Itoffersbothlowbiascurrent(10pAmax,warmedup)andlowquiescentcurrent(400μAmax)andisfabricatedwithion-implantedFETandlaserwafertrimmingtechnologies.Inputbiascur

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD648KR

DualPrecision,LowPowerBiFETOpAmp

PRODUCTDESCRIPTION TheAD648isamatchedpairoflowpower,precisionmonolithicoperationalamplifiers.Itoffersbothlowbiascurrent(10pAmax,warmedup)andlowquiescentcurrent(400μAmax)andisfabricatedwithion-implantedFETandlaserwafertrimmingtechnologies.Inputbiascur

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD648KR-REEL

DualPrecision,LowPowerBiFETOpAmp

PRODUCTDESCRIPTION TheAD648isamatchedpairoflowpower,precisionmonolithicoperationalamplifiers.Itoffersbothlowbiascurrent(10pAmax,warmedup)andlowquiescentcurrent(400μAmax)andisfabricatedwithion-implantedFETandlaserwafertrimmingtechnologies.Inputbiascur

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD648S

DualPrecision,LowPowerBiFETOpAmp

PRODUCTDESCRIPTION TheAD648isamatchedpairoflowpower,precisionmonolithicoperationalamplifiers.Itoffersbothlowbiascurrent(10pAmax,warmedup)andlowquiescentcurrent(400μAmax)andisfabricatedwithion-implantedFETandlaserwafertrimmingtechnologies.Inputbiascur

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD648SCHIPS

DualPrecision,LowPowerBiFETOpAmp

PRODUCTDESCRIPTION TheAD648isamatchedpairoflowpower,precisionmonolithicoperationalamplifiers.Itoffersbothlowbiascurrent(10pAmax,warmedup)andlowquiescentcurrent(400μAmax)andisfabricatedwithion-implantedFETandlaserwafertrimmingtechnologies.Inputbiascur

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD648SQ

DualPrecision,LowPowerBiFETOpAmp

PRODUCTDESCRIPTION TheAD648isamatchedpairoflowpower,precisionmonolithicoperationalamplifiers.Itoffersbothlowbiascurrent(10pAmax,warmedup)andlowquiescentcurrent(400μAmax)andisfabricatedwithion-implantedFETandlaserwafertrimmingtechnologies.Inputbiascur

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD648T

DualPrecision,LowPowerBiFETOpAmp

PRODUCTDESCRIPTION TheAD648isamatchedpairoflowpower,precisionmonolithicoperationalamplifiers.Itoffersbothlowbiascurrent(10pAmax,warmedup)andlowquiescentcurrent(400μAmax)andisfabricatedwithion-implantedFETandlaserwafertrimmingtechnologies.Inputbiascur

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ARF648

FASTRECOVERYDIODE

FASTRECOVERYDIODE Repetitivevoltageupto2500V Meanforwardcurrent2510A Surgecurrent30kA

POSEICO

Power Semiconductors

BD648

PNPSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Electronic Solutions

伯恩斯

BD648

PNPSILICONDARLINGTONTRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BD648

NPNSILICONDARLINGTONTRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BD648

PNPSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ?DesignedforComplementaryUsewithBD645,BD647,BD649ANDBD651 ?62.5Wat25°CCaseTemperture ?8AContinuousCollectorCurrent ?MinimumhFEof750at3V,3A

TRSYS

Transys Electronics

BD648

PNPSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

POINN

Power Innovations Ltd

BD648

SiliconPNPPowerTransistors

SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD645/647/649/651 ·DARLINGTON APPLICATIONS ·Foruseinoutputstagesinaudioequipment,generalamplifier,andanalogueswitchingapplications

SAVANTIC

Savantic, Inc.

BD648

iscSiliconPNPDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD648

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. NPNcomplementsareBD643,BD645,BD647

COMSET

Comset Semiconductor

BD648

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

BD648

SILICONDARLINGTONPOWERTRANSISTORS

COMSET

Comset Semiconductor

BD648F

iscSiliconPNPDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號:

    AD648JRZ

  • 功能描述:

    IC OPAMP BIFET 1MHZ DUAL 8SOIC

  • RoHS:

  • 類別:

    集成電路(IC) >> Linear - Amplifiers - Instrumentation

  • 系列:

    -

  • 產(chǎn)品培訓(xùn)模塊:

    Differential Circuit Design Techniques for Communication Applications

  • 標(biāo)準(zhǔn)包裝:

    1

  • 放大器類型:

    RF/IF 差分

  • 電路數(shù):

    1

  • 輸出類型:

    差分

  • 轉(zhuǎn)換速率:

    9800 V/µs

  • 增益帶寬積:

    -

  • -3db帶寬:

    2.9GHz 電流 -

  • 輸入偏壓:

    3µA 電壓 -

  • 輸入偏移:

    - 電流 -

  • 電源:

    40mA 電流 -

  • 輸出/通道:

    - 電壓 -

  • 電源,單路/雙路(±):

    3 V ~ 3.6 V

  • 工作溫度:

    -40°C ~ 85°C

  • 安裝類型:

    表面貼裝

  • 封裝/外殼:

    16-VQFN 裸露焊盤,CSP

  • 供應(yīng)商設(shè)備封裝:

    16-LFCSP-VQ

  • 包裝:

    剪切帶(CT)

  • 產(chǎn)品目錄頁面:

    551(CN2011-ZH PDF)

  • 其它名稱:

    ADL5561ACPZ-R7CT

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Analog Devices
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19021
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AD
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20000
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AD
2017+
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17850
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ADI
22+
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10000
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ADI
2020+
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9500
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5000
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23+
SOIC-8
7862
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24+
SOIC-8_150mil
58209
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AD
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更多AD648JRZ供應(yīng)商 更新時(shí)間2024-12-31 17:05:00