首頁 >2SC3332S-AA>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
2SC3332S-AA | Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features ?Hgihbreakdownvoltage ?ExcellenthFElinearity ?WideSOAandhighlyresistanttobreakdown ?AdoptionofMBITprocess | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
2SC3332S-AA | Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features ?Hgihbreakdownvoltage ?ExcellenthFElinearity ?WideSOAandhighlyresistanttobreakdown ?AdoptionofMBITprocess | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
2SC3332S-AA | Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features ?Hgihbreakdownvoltage ?ExcellenthFElinearity ?WideSOAandhighlyresistanttobreakdown ?AdoptionofMBITprocess | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
2SC3332S-AA | 包裝:散裝 封裝/外殼:TO-226-3,TO-92-3 標(biāo)準(zhǔn)主體(!--TO-226AA) 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS NPN 160V 0.7A 3NP | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
High-VoltageSwitchingApplications High-VoltageSwitchingApplications Features ·Hgihbreakdownvoltage. ·ExcellenthFElinearity. ·WideASOandhighlyresistanttobreakdown. ·AdoptionofMBITprocess. | SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會社 | SANYO | ||
High-VoltageSwitchingApplications | SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會社 | SANYO | ||
BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP Features ?Hgihbreakdownvoltage ?ExcellenthFElinearity ?WideSOAandhighlyresistanttobreakdown ?AdoptionofMBITprocess | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP Features ?Hgihbreakdownvoltage ?ExcellenthFElinearity ?WideSOAandhighlyresistanttobreakdown ?AdoptionofMBITprocess | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP Features ?Hgihbreakdownvoltage ?ExcellenthFElinearity ?WideSOAandhighlyresistanttobreakdown ?AdoptionofMBITprocess | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP Features ?Hgihbreakdownvoltage ?ExcellenthFElinearity ?WideSOAandhighlyresistanttobreakdown ?AdoptionofMBITprocess | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP Features ?Hgihbreakdownvoltage ?ExcellenthFElinearity ?WideSOAandhighlyresistanttobreakdown ?AdoptionofMBITprocess | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP Features ?Hgihbreakdownvoltage ?ExcellenthFElinearity ?WideSOAandhighlyresistanttobreakdown ?AdoptionofMBITprocess | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP Features ?Hgihbreakdownvoltage ?ExcellenthFElinearity ?WideSOAandhighlyresistanttobreakdown ?AdoptionofMBITprocess | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP Features ?Hgihbreakdownvoltage ?ExcellenthFElinearity ?WideSOAandhighlyresistanttobreakdown ?AdoptionofMBITprocess | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP Features ?Hgihbreakdownvoltage ?ExcellenthFElinearity ?WideSOAandhighlyresistanttobreakdown ?AdoptionofMBITprocess | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP Features ?Hgihbreakdownvoltage ?ExcellenthFElinearity ?WideSOAandhighlyresistanttobreakdown ?AdoptionofMBITprocess | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP Features ?Hgihbreakdownvoltage ?ExcellenthFElinearity ?WideSOAandhighlyresistanttobreakdown ?AdoptionofMBITprocess | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP Features ?Hgihbreakdownvoltage ?ExcellenthFElinearity ?WideSOAandhighlyresistanttobreakdown ?AdoptionofMBITprocess | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP Features ?Hgihbreakdownvoltage ?ExcellenthFElinearity ?WideSOAandhighlyresistanttobreakdown ?AdoptionofMBITprocess | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
產(chǎn)品屬性
- 產(chǎn)品編號:
2SC3332S-AA
- 制造商:
onsemi
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)
- 包裝:
散裝
- 晶體管類型:
NPN
- 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):
400mV @ 2mA,20mA
- 電流 - 集電極截止(最大值):
100nA(ICBO)
- 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):
100 @ 100mA,5V
- 頻率 - 躍遷:
120MHz
- 工作溫度:
150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-226-3,TO-92-3 標(biāo)準(zhǔn)主體(!--TO-226AA)
- 供應(yīng)商器件封裝:
3-NP
- 描述:
TRANS NPN 160V 0.7A 3NP
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ONSemiconductor |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢供應(yīng) |
詢價(jià) | ||
ON/安森美 |
2021+ |
TO92 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
ON |
21+ |
TO92 |
10832 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
ON |
22+ |
TO92 |
25000 |
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十 |
詢價(jià) | ||
ON |
16+ |
TO92 |
5406 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
ON |
23+ |
TO92 |
5406 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
ON Semiconductor |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
ON |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價(jià) | ||||
ON |
2023+ |
TO92 |
8800 |
正品渠道現(xiàn)貨 終端可提供BOM表配單。 |
詢價(jià) | ||
ON |
23+ |
TO92 |
10832 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |
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