首頁 >2N7002K-PEC>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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N-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V) | YANGJIEYangzhou yangjie electronic co., ltd 揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司 | YANGJIE | ||
N-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedUpTo2kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002KQissuitableforautomotiveapplications requirings | DIODESDiodes Incorporated 美臺(tái)半導(dǎo)體 | DIODES | ||
60VN-channelTrenchMOSFET 1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inanultrasmallDFN1110D-3 (SOT8015)leadlessSurface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 2.Featuresandbenefits ?Logic-levelcompatible ?Sidewettableflanksforoptical | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
N-ChannelENHANCEMENTMODEPOWERMOSFET FEATURES: *Gate-SourceESDProtected:1500V *FastSwitchingSpeed *LowOn-Resistance *LowVoltageDriver APPLICATIONS: *Drivers:Relays,Solenoids,Lamps,Hammers,Displays,Memories *BatteryOperatedSystems *PowerSupplyConverterCircuits *Load/PowerSwitchi | WEITRON Weitron Technology | WEITRON | ||
ChannelEnhancementMOSFET FEATURES ?LowGateChargeforFastSwitching. ?ESDProtectedGate. APPLICATIONS ?PowerManagementLoadSwitch ?ESDProtected:1500V ?Easilydesigneddrivecircuits | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
N-ChannelEnhancementMOSFET | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS | ||
SOT-523Plastic-EncapsulateMosfets | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
N-ChannelEnhancementModeFieldEffectTransistor Features ?LowonresistanceRDS(ON) ?Lowgatethresholdvoltage ?Lowinputcapacitance ?ESDprotectedupto2KV | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays | PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司 | PANJIT | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R | PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司 | PANJIT |
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