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2N5401HR

Hi-Rel PNP bipolar transistor 150 V, 0.5 A

Description The2N5401HRisasiliconplanarepitaxialPNPtransistoravailableinTO-18andLCC-3packages.ItisspecificallydesignedforaerospaceHi-RelapplicationsandESCCqualifiedaccordingtothe5202-014specification.IncaseofconflictbetweenthisdatasheetandESCCdetailedspeci

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

2N5401N

PNPSiliconTransistor

Description ?Generalpurposeamplifier ?Highvoltageapplication Features ?Highcollectorbreakdownvoltage:VCBO=-160V,VCEO=-160V ?Lowcollectorsaturationvoltage:VCE(sat)=-0.5V(MAX.) ?Complementarypairwith2N5551N

AUK

AUK corp

2N5401RLRA

AmplifierTransistorsPNPSilicon

AmplifierTransistors PNPSilicon Features ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2N5401RLRA

AmplifierTransistors

AmplifierTransistors PNPSilicon Features ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2N5401RLRAG

AmplifierTransistorsPNPSilicon

AmplifierTransistors PNPSilicon Features ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2N5401RLRAG

AmplifierTransistors

AmplifierTransistors PNPSilicon Features ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2N5401RLRM

AmplifierTransistors

AmplifierTransistors PNPSilicon Features ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2N5401RLRM

AmplifierTransistorsPNPSilicon

AmplifierTransistors PNPSilicon Features ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2N5401RLRMG

AmplifierTransistorsPNPSilicon

AmplifierTransistors PNPSilicon Features ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2N5401S

PNPSwitchingTransistor

Features -EpoxymeetsUL-94V-0flammabilityrating. -MoisturesensitivityLevel1.

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

2N5401S

HighVoltageTransistor

FEATURE ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

FS

First Silicon Co., Ltd

2N5401S

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,HIGHVOLTAGE)

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES ?HighCollectorBreakdwonVoltage:VCBO=-160V,VCEO=-150V ?LowLeakageCurrent.:ICBO=-50nA(Max.)@VCB=-120V ?LowSaturationVoltage:VCE(sat)=-0.5V(Max.)@IC=-50mA,IB=-5mA ?LowNoise:NF=8dB(Max.)

KECKEC CORPORATION

KEC株式會社

2N5401S

EPITAXIALPLANARPNPTRANSISTOR

KECKEC CORPORATION

KEC株式會社

2N5401SQ

PNPTransistor

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半導體東莞市平晶半導體科技有限公司

2N5401TA

PNPEpitaxialSiliconTransistor

AmplifierTransistor ?Collector-EmitterVoltage:VCEO=150V ?CollectorDissipation:PC(max)=625mW ?Suffix“-C”meansConterCollector(1.Emitter2.Collector3.Base)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

2N5401-TA

TO-92Plastic-EncapsulateTransistors

Features SwitchingandAmplificationinHighVoltage ApplicationssuchasTelephony LowCurrent HighVoltage

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

2N5401U

PNPSiliconEpitaxialPlanarTransistor

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導體先之科半導體科技（東莞）有限公司

G2N5401

PNPEPITAXIALPLANARTRANSISTOR

GTM

勤益投資控股股份有限公司

G2N5401

TheG2N5401isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages.

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

H2N5401

PNPEPITAXIALPLANARTRANSISTOR

Description TheH2N5401isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. Features ?ComplementstoNPNTypeH2N5551 ?HighCollector-EmitterBreakdownVoltage(VCEO=150V(@IC=1mA))

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

詳細參數

  • 型號：

    2N5401HR

  • 制造商：

    STMicroelectronics

  • 功能描述：

    SMALL SIGNAL TRANSISTORPNP600MA VCEO=-150VOLTSTO-18 GOLD - Bulk

供應商型號品牌批號封裝庫存備注價格
STM原廠目錄
24+
LCC-3;TO-18
96000
全新原裝
 詢價
NEC
23+
TO-92
90000
原裝原盤
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UTC
23+
TO92
9960
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UTC/友順
19+
SOT-89TR
62500
一級代理商,原裝正品
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UTC
05+
TO-92
1424
現(xiàn)貨
 詢價
UTC
21+
TO-92
1374
原裝現(xiàn)貨假一賠十
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UTC
22+
TO-92
32350
原裝正品 假一罰十 公司現(xiàn)貨
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UTC/友順
23+
TO-92
50000
全新原裝正品現(xiàn)貨,支持訂貨
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UTC
23+
TO-92
50000
全新原裝正品現(xiàn)貨,支持訂貨
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UTC
TO-92
608900
原包原標簽100%進口原裝常備現(xiàn)貨!
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更多2N5401HR供應商 更新時間2024-10-28 14:05:00

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