20N06

Marking：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS=60V,ID=20A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology ExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired

20N06

Marking：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

GeneralDescription The20N06usesadvancedtrenchtechnologyanddesignto provideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications. Features VDS=60V,ID=20A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology

20N40CL

SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETES?monolithiccircuitryforusageasanIgnitionCoilDriver. ?TemperatureCompensatedGate–C

20N50

N-Channel Power MOSFET

DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,motorcontrolcircuits,UPSandgeneralpurposeswitchingapplications.TheNell20N50isathree-terminalsilicondevicewithcurrentconductioncapabilityof20A,fastswitchingsp

20N60

20A, 600V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

20N60A4D

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

TheHGTG20N60A4DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThisdevicehasthehighinputimpedanceofaMOSFET andthelowon?stateconductionlossofabipolartransistor.Themuch loweron?statevoltagedropvariesonlymode

20N60B

HiPerFAST IGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features ?InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD ?Highcurrenthandlingcapability ?LatestgenerationHDMOSTMprocess ?MOSGateturn-on -drivesimplicity

20N60BD1

HiPerFAST IGBT with Diode

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features ?Internationalstandardpackages ?HighfrequencyIGBTandantiparallelFREDinonepackage ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on -drivesimplicity Applications ?Unin

20N60C2

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances

20N60C3

45A, 600V, UFS Series N-Channel IGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately