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PMEG4002ELD

Marking:1011;Package:SOD882D;40 V, 0.2 A low VF MEGA Schottky barrier rectifier

1.1Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotection,encapsulatedinaSOD882Dleadlessultra smallSurface-MountedDevice(SMD)plasticpackagewithvisibleandsolderableside pads. 1.2F

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BC817-40QA

Marking:101100;Package:SOT1215;45 V, 500 mA NPN general-purpose transistors

Featuresandbenefits *General-purposetransistor *Twocurrentgainselections *Lowpackageheightof0.37mm *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA124EQA

Marking:101110;Package:DFN1010D-3;50 V, 100 mA PNP resistor-equipped transistors

Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■100mAoutputcurrentcapability ■reducedpickandplacecosts

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA124EQA

Marking:101110;Package:DFN1010D-3;50 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?built-inbiasresistors ?simplifiescircuitdesign ?reducescomponentcount ?reducedpickandplacecosts ?lowpackageheightof0.37mm ?AEC-Q101qualified ?suitableforAutomaticOpticalInspection (AOI)ofsolderjoint

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA124EQA

Marking:101110;Package:SOT1215;50 V, 100 mA PNP resistor-equipped transistors

1.1Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC123JQA

Marking:101111;Package:DFN1010D-3;50 V, 100 mA NPN resistor-equipped transistors

Generaldescription 100mANPNResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducedpickandplacecosts

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC123JQA

Marking:101111;Package:SOT1215;50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?AEC-Q101qualified ?SuitableforAutomaticOptical Inspection(AOI)ofsolderjoint

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC124EQA

Marking:101101;Package:DFN1010D-3;50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?AEC-Q101qualified ?SuitableforAutomaticOptical Inspection(AOI)ofsolderjoint

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

SVT10111NDTR

Marking:10111ND;Package:TO-252-2L;14A, 100V N-CHANNEL MOSFET

DESCRIPTION SVT10111NDisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilan'sLVMOStechnology. Theimprovedprocessandcellstructurehavebeenespecially tailoredtominimizeon-stateresistance,providesuperiorswitching performanceandwithsta

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

PDTC124EQA

Marking:101101;Package:DFN1010D-3;50 V, 100 mA NPN resistor-equipped transistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    1011

  • 制造商:

    Keystone Electronics

  • 類別:

    電池產(chǎn)品 > 電池座,電池夾,電池觸頭

  • 包裝:

    散裝

  • 電池類型,功能:

    圓柱形,座

  • 樣式:

    座(開口)

  • 電池尺寸:

    CR2

  • 電池數(shù):

    1

  • 安裝類型:

    PCB,通孔

  • 端接樣式:

    PC 引腳

  • 板上高度:

    0.585"(14.86mm)

  • 工作溫度:

    -50°C ~ 145°C

  • 描述:

    BATT HOLDER CR2 1 CELL PC PIN

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