04023J8R2BBS電容器的薄膜電容器規(guī)格書PDF中文資料

Heterojunction Bipolar Transistor Technology (InGaP HBT)

High Efficiency/Linearity Amplifier

The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 22 dBm, covering frequencies from 1500 to 2800 MHz. It operates from a supply voltage of 3 to 5 V. The amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost--effective, surface mount QFN 3 × 3 package. The device offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance.

? Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 mA

Features

? Frequency: 1500–2800 MHz

? P1dB: 33 dBm @ 2500 MHz

? Power Gain: 26.5 dB @ 2500 MHz

? OIP3: 48 dBm @ 2500 MHz

? EVM ≤ 3 @ 23.5 dBm Pout, WLAN (802.11g)

? Active Bias Control (adjustable externally)

? Power Down Control via VBIAS Pin

? Class 3A HBM ESD Rating

? Single 3 to 5 V Supply

? Single--ended Power Detector

? Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package

? In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.