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2312

BandpassFilter

KR

KR Electronics, Inc.

2312

Pneumaticmuffler

FESTOFesto Corporation.

費(fèi)斯托公司德國FESTO費(fèi)斯托（中國）有限公司

2312

NylonHoseClamps

HeycoHeyco.

?？?/span>海科(Heyco)

2312-RC

HighCurrentToroidInductors

BournsBourns Electronic Solutions

伯恩斯伯恩斯（邦士）

2312-RC

HighCurrentToroidInductors

BournsBourns Electronic Solutions

伯恩斯伯恩斯（邦士）

2312-RC

HighCurrentToroidInductorsHorizontalorverticalmount

BournsBourns Electronic Solutions

伯恩斯伯恩斯（邦士）

2312-RC

HighCurrentToroidInductors

BournsBourns Electronic Solutions

伯恩斯伯恩斯（邦士）

2312-RC

HighCurrentToroidInductors

BournsBourns Electronic Solutions

伯恩斯伯恩斯（邦士）

2312T

PhotoelectronicSmokedetectorwithElectronicHeatSensing

SYSTEMSENSOR

Systemsensor advanced ideas.

AM2312

MOSFET20VN-CHANNELENHANCEMENTMODE

DESCRIPTION TheAM2312isavailableinSOT-23Spackage. FEATURES ?VDS=20V RDS(ON),VGS@4.5V,IDS@5.0A=41mΩ RDS(ON),VGS@2.5V,IDS@4.5A=47mΩ ?Advancedtrenchprocesstechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?Capableof2.5Vgatedrive ?Loweron-resistanc

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

AM2312N

N-Channel20-V(D-S)MOSFET

AnalogPower

Analog Power

AP2312GN

N-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

APM2312

N-ChannelEnhancementModeMOSFET

Features ?16V/5A,RDS(ON)=35m?(typ.)@VGS=4.5V RDS(ON)=45m?(typ.)@VGS=2.5V RDS(ON)=60m?(typ.)@VGS=1.8V ?SuperHighDenseCellDesignforExtremelyLowRDS(ON) ?ReliableandRugged ?SOT-23Package Applications ?PowerManagementinNotebookComput

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

APM2312A

N-ChannelEnhancementModeMOSFET

Features ?16V/5A,RDS(ON)=35m?(typ.)@VGS=4.5V RDS(ON)=45m?(typ.)@VGS=2.5V RDS(ON)=60m?(typ.)@VGS=1.8V ?SuperHighDenseCellDesignforExtremelyLowRDS(ON) ?ReliableandRugged ?SOT-23Package Applications ?PowerManagementinNotebookComput

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

APM2312AC-TR

N-ChannelEnhancementModeMOSFET

Features ?16V/5A,RDS(ON)=35m?(typ.)@VGS=4.5V RDS(ON)=45m?(typ.)@VGS=2.5V RDS(ON)=60m?(typ.)@VGS=1.8V ?SuperHighDenseCellDesignforExtremelyLowRDS(ON) ?ReliableandRugged ?SOT-23Package Applications ?PowerManagementinNotebookComput

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

BC2312

Plastic-EncapsulateMOSFETS

FEATURE TrenchFETPowerMOSFET APPLICATION DC/DCConverters LoadSwitchingforPortableApplications

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BLM2312

N-ChannelEnhancementModePowerMOSFET

BellingSHANGHAI BELLING CO., LTD.

上海貝嶺上海貝嶺股份有限公司

CES2312

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,4.5A,RDS(ON)=33m?@VGS=4.5V. RDS(ON)=40m?@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2312

N-Channel20V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverters ?LoadSwitchforPortableApplications

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CHT2312PT

N-ChannelEnhancementModeFieldEffectTransistor

CHENMKOchenmko

力勤股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    YSK2312

  • 制造商：

    Crouzet

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
RENESAS/瑞薩
23+
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價(jià)
RENESAS/瑞薩
TOOL
22+
56000
全新原裝進(jìn)口,假一罰十
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RENESAS/瑞薩
TOOL
22+
56000
全新原裝進(jìn)口,假一罰十
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Renesas
1645+
?
11520
只做原裝進(jìn)口,假一罰十
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Yeashin
1937+
SOIC-8
7318
向鴻代理渠道,有現(xiàn)貨常備料,優(yōu)勢料
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YEASHIN
24+
SOIC-8
900000
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YEASHIN
1822+
SOT-23
6852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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YEASHIN
21+
SOT-23
65200
一級(jí)代理/放心采購
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YEASHIN
2048+
SOT-23
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
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YEASHIN
23+
SOD-323
63000
原裝正品現(xiàn)貨
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更多YSK2312供應(yīng)商 更新時(shí)間2024-10-27 11:10:00

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