W49L201T-70中文資料華邦電子數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

GENERAL DESCRIPTION

The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K ′ 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L201 results in fast program/erase operations with extremely low current consumption (compared to other comparable 3.3-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.

FEATURES

· Single 3.3-volt operations:

- 3.3-volt Read/Erase/Program

· Fast Program operation:

- Word-by-Word programming: 50 mS (max.)

· Fast Erase operation: 100 mS (typ.)

· Fast Read access time: 70/90 nS

· Endurance: 10K cycles (typ.)

· Ten-year data retention

· Hardware data protection

· Sector configuration

- One 8K words Boot Block with lockout protection

- Two 8K words Parameter Blocks

- One 104K words (208K bytes) Main Memory Array Blocks

· Low power consumption

- Active current: 15 mA (typ.)

- Standby current: 10 mA (typ.)

· Automatic program and erase timing with internal VPP generation

· End of program or erase detection

- Toggle bit

- Data polling

· Latched address and data

· TTL compatible I/O

· JEDEC standard word-wide pinouts

· Available packages: 44-pin SOP, 48-pin TSOP