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VG36648041CT中文資料VML數(shù)據(jù)手冊(cè)PDF規(guī)格書

VG36648041CT
廠商型號(hào)

VG36648041CT

功能描述

CMOS Synchronous Dynamic RAM

文件大小

949.29 Kbytes

頁(yè)面數(shù)量

70 頁(yè)

生產(chǎn)廠商 Vanguard International Semiconductor
企業(yè)簡(jiǎn)稱

VML

中文名稱

Vanguard International Semiconductor官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-3-4 18:13:00

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VG36648041CT規(guī)格書詳情

Description

The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is packaged in JEDEC standard pinout and standard plastic TSOP package.

Features

? Single 3.3V (±0.3V) power supply

? High speed clock cycle time : 7/8ns

? Fully synchronous with all signals referenced to a positive clock edge

? Programmable CAS Iatency (2,3)

? Programmable burst length (1,2,4,8,& Full page)

? Programmable wrap sequence (Sequential/Interleave)

? Automatic precharge and controlled precharge

? Auto refresh and self refresh modes

? Quad Internal banks controlled by A12 & A13 (Bank select)

? Each Bank can operate simultaneously and independently

? LVTTL compatible I/O interface

? Random column access in every cycle

? X8 organization

? Input/Output controlled by DQM

? 4,096 refresh cycles/64ms

? Burst termination by burst stop and precharge command

? Burst read/single write option

產(chǎn)品屬性

  • 型號(hào):

    VG36648041CT

  • 制造商:

    VML

  • 制造商全稱:

    VML

  • 功能描述:

    CMOS Synchronous Dynamic RAM

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