零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
VFT2080S | Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220AB,an | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
VFT2080S | Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
VFT2080S | Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
包裝:帶盒(TB) 封裝/外殼:TO-220-3 類別:分立半導體產品 二極管 - 整流器 - 單 描述:DIODE SCHOTTKY 20A 80V ITO-220AB | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | ||
包裝:帶盒(TB) 封裝/外殼:TO-220-3 類別:分立半導體產品 二極管 - 整流器 - 單 描述:DIODE SCHOTTKY 20A 80V ITO-220AB | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | ||
DualTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220AB,an | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
TrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC ?Halogen-freea | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
TrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
TrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220AB,an | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Single-PhaseSingleIn-LineBridgeRectifiers | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Lowforwardvoltagedrop | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Lowforwardvoltagedrop | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
SchottkyRectifier,2x10A | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Lowforwardvoltagedrop | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
SchottkyRectifier DESCRIPTION ThiscentertapSchottkyrectifierhasbeenoptimizedforlowreverseleakageathightemperature.Theproprietarybarriertechnologyallowsforreliableoperationupto150°Cjunctiontemperature.Typicalapplicationsareinswitchingpowersupplies,converters,freewheelingdiodes, | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay |
詳細參數
- 型號:
VFT2080S
- 制造商:
VISHAY
- 制造商全稱:
Vishay Siliconix
- 功能描述:
Trench MOS Barrier Schottky Rectifier
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
23+ |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | |||
VISHAY/威世 |
23+ |
ITO-220A |
11200 |
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
TO-220F |
90000 |
集團化配單-有更多數量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | ||||
VISHAY |
1809+ |
TO-220 |
3675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
24+ |
N/A |
54000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
Vishay General Semiconductor - |
24+ |
TO-220-3 |
9350 |
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證 |
詢價 | ||
ASI |
24+ |
260 |
現(xiàn)貨供應 |
詢價 | |||
ASI |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
ASI |
23+ |
原廠原包 |
19960 |
只做進口原裝 終端工廠免費送樣 |
詢價 | ||
Siliconix/Vishay |
新 |
2163 |
全新原裝 貨期兩周 |
詢價 |
相關規(guī)格書
更多- VFT2080S-E3/4W
- VFT2080S-M3-4W
- VFT300-28_07
- VFT300-50_07
- VFT3045BP
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- VFT8HA17L210.0M
- VFT8HA17P210.0M
- VFT8HA17S210.0M
- VFT8HA18L210.0M
- VFT8HA18P210.0M
- VFT8HA18S210.0M
- VFT8HA28L210.0M
- VFT8HA28P210.0M
- VFT8HA28S210.0M
相關庫存
更多- VFT2080S-M3/4W
- VFT300-28
- VFT300-50
- VFT30-28
- VFT3045BP-M3/4W
- VFT3045CBP
- VFT3045CBP-M3
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- VFT45-28
- VFT5200
- VFT5200-E3-4W
- VFT5-28_07
- VFT6045C
- VFT6045CBP_1205
- VFT6045CBP-M3/4W
- VFT6045C-M3/4W
- VFT760
- VFT760-M3/4W
- VFT8
- VFT80US05
- VFT80US15
- VFT870
- VFT8HA17L510.0M
- VFT8HA17P510.0M
- VFT8HA17S510.0M
- VFT8HA18L510.0M
- VFT8HA18P510.0M
- VFT8HA18S510.0M
- VFT8HA28L510.0M
- VFT8HA28P510.0M
- VFT8HA28S510.0M