首頁 >VF30120S>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

VF30120S

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半導體

VF30120S

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

VishayVishay Siliconix

威世科技威世科技半導體

VF30120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半導體

VF30120SG

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature2

VishayVishay Siliconix

威世科技威世科技半導體

VF30120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導體

VF30120SG_V01

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導體

VF30120SG-E3

Low forward voltage drop, low power losses

High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature2

VishayVishay Siliconix

威世科技威世科技半導體

VF30120SG-E3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半導體

VF30120SG-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature2

VishayVishay Siliconix

威世科技威世科技半導體

VF30120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF30120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF30120S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

VishayVishay Siliconix

威世科技威世科技半導體

VF30120S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF30120S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF30120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF30120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF30120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF30120SG_10

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF30120SG_15

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF30120SG-E3-4W

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號:

    VF30120S

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY
23+
TO-220
8600
全新原裝現(xiàn)貨
詢價
VISHAY
1735+
TO220
6528
科恒偉業(yè)!只做原裝正品!假一賠十!
詢價
VISHAY
23+
TO220
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
VISHAY
2020+
TO220
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
VISHAY
21+
ITO-220AB
6000
絕對原裝現(xiàn)貨
詢價
JINGDAO/晶導微
23+
SOD-323
69820
終端可以免費供樣,支持BOM配單!
詢價
VISHAY
21+
TO220
49
原裝現(xiàn)貨假一賠十
詢價
VISHAY/威世
23+
TO-220
10000
公司只做原裝正品
詢價
VISHAY
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
VISHAY/威世
2022+
TO-220
12888
原廠代理 終端免費提供樣品
詢價
更多VF30120S供應(yīng)商 更新時間2025-1-15 14:02:00