| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
VF30100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
VF30100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
Trench MOS Schottky technology UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbatht | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?Lowthermalresistance ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：TO-220-3 全封裝，隔離接片 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE ARRAY SCHOTTKY 100V ITO220 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | ||
包裝：管件 封裝/外殼：TO-220-3 全封裝，隔離接片 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE SCHOTTKY 30A 100V ITO220AB | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.39VatIF=5A UltraLowVF=0.39VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathte | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.437VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.455VatIF=5A UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號(hào)：
VF30100C
- 制造商：
VISHAY
- 制造商全稱：
Vishay Siliconix
- 功能描述：
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VISHAY |
23+ |
TO-220 |
8600 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
VISHAY |
21+ |
TO-220F |
6000 |
絕對(duì)原裝現(xiàn)貨 |
詢價(jià) | ||
VISHAY |
2023+ |
TO-220 |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO-220 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
NOV |
23+ |
No |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VISHAY/威世 |
2022+ |
TO-220 |
12888 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
TH/韓國(guó)太虹 |
2048+ |
TO-220F |
9851 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
VISHAY/威世通 |
23+ |
TO-220 |
6000 |
原裝正品，支持實(shí)單 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO-220F |
20000 |
原裝正品 歡迎咨詢 |
詢價(jià) |
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相關(guān)庫(kù)存
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- VFM-11F11-K01
- VFM-15F11-K02
- VFM-15F41-S01
