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2609B

BroadbandPhotodiodeModule

The2609Bisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiberopticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetobettercontrolofparasitic

EMCORE

Emcore Corporation

2609B

2609BBroadbandPhotodiodeModule

Description The2609Bisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiber-opticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetobettercontro

agere

Agere Systems

2609C

2609CBroadbandPhotodiodeModule

Description The2609Cisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiber-opticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetocontrolofpa

agere

Agere Systems

AP2609GY-HF

SimpleDriveRequirement,SmallPackageOutline

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

AP2609GYT-HF

SimpleDriveRequirement,SmallSize&LowerProfile

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

CEC2609

DualEnhancementModeFieldEffectTransistor(NandPChannel)

20V,4.8A,RDS(ON)=38mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-3.0A,RDS(ON)=100mW@VGS=-4.5V. RDS(ON)=145mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. S2

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEH2609

DualEnhancementModeFieldEffectTransistor

FEATURES ■20V,3.5A,RDS(ON)=60mΩ@VGS=4.5V. RDS(ON)=80mΩ@VGS=2.5V. ■-20V,-2.5A,RDS(ON)=100mΩ@VGS=-4.5V. RDS(ON)=145mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapa

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEH2609A

DualEnhancementModeFieldEffectTransistor(NandPChannel)

20V,4A,RDS(ON)=45mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-2.8A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FKN2609

P-Ch20VFastSwitchingMOSFETs

Description TheFKN2609isthehighcelldensitytrenched P-chMOSFETs,whichprovidesexcellentRDSON andefficiencyformostofthesmallpower switchingandloadswitchapplications. TheFKN2609meetstheRoHSandGreenProduct requirementwithfullfunctionreliabilityapproved.

FETEKFETek Technology Corp.

臺(tái)灣東沅東沅科技股份有限公司

FKUC2609

P-Ch20VFastSwitchingMOSFETs

Description TheFKUC2609isthehighcelldensitytrenched P-chMOSFETs,whichprovidesexcellentRDSON andefficiencyformostofthesmallpower switchingandloadswitchapplications. TheFKUC2609meetstheRoHSandGreen Productrequirementwithfullfunctionreliability approved.

FETEKFETek Technology Corp.

臺(tái)灣東沅東沅科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    VEC2609-TL-E

  • 制造商：

    SANYO Semiconductor Co Ltd

  • 功能描述：

    MOSFETNP CHVEC8

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SANYO
1708+
?
6500
只做原裝進(jìn)口,假一罰十
 詢價(jià)
SANYO
2016+
VEC-8
10987
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
 詢價(jià)
SANYO
2016+
VEC-8
6528
只做原裝正品現(xiàn)貨!或訂貨
 詢價(jià)
三年內(nèi)
1983
只做原裝正品
 詢價(jià)
SANYO
24+
VEC-8
65200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
SANYO
21+
VEC-8
89661
原裝現(xiàn)貨假一賠十
 詢價(jià)
SANYO
23+
VEC-8
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
SANYO/三洋
23+
VEC-8
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
SANYO/三洋
22+
VEC-8
50000
只做原裝假一罰十,歡迎咨詢
 詢價(jià)
SANYO
14+
VEC-8
6000
一級(jí)代理,專注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
更多VEC2609-TL-E供應(yīng)商 更新時(shí)間2025-1-29 15:09:00

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