VBM15R10S中文資料微碧半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
VBM15R10S規(guī)格書詳情
FEATURES
? Low gate charge Qg results in simple drive
requirement
? Improved gate, avalanche and dynamic dV/dt
ruggedness
? Fully characterized capacitance and avalanche voltage
and current