零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
UTR6405 | RECTIFIERS RECTIFIERS FastRecovery,6Ampto9Amp | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
RECTIFIERS RECTIFIERS FastRecovery,6Ampto9Amp | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
InsulationPiercingClips | POMONA Pomona Electronics | POMONA | ||
ACFilmCapacitorsLighting Features ■Self-healingproperties ■Lowdissipationfactor ■Highinsulationresisitance Construction ■Dielectric:polypropylenefilm ■Aluminiumcan ■Softpolyurethanresin ■Internaldischageresistor ■Overpressuredisconnector Typicalapplications Forgeneralsinewaveapplicat | EPCOSepcos 愛(ài)普科斯愛(ài)普科斯與TDK元件事業(yè)部 | EPCOS | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO6405usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO6405isPb-free(meetsROHS&Sony259specifications).AO6405LisaGreenProductorde | AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體 | AOSMD | ||
30VP-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體 | AOSMD | ||
P-ChannelMOSFET ■Features ●VDS(V)=-30V ●ID=-5A(VGS=-10V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
P-ChannelMOSFET ■Features ●VDS(V)=-30V ●ID=-5A(VGS=-10V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO6405usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO6405isPb-free(meetsROHS&Sony259specifications).AO6405LisaGreenProductorde | AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體 | AOSMD | ||
P-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
30VP-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體 | AOSMD | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAON6405LcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. -RoHSCompliant -HalogenFree Features VDS(V)=-30V ID=-30A(VGS=-1 | AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體 | AOSMD | ||
12/24VSYSTEMPOWERSUPPLYIC | AtmelAtmel Corporation 愛(ài)特梅爾愛(ài)特梅爾公司 | Atmel | ||
FanlessCompactEmbeddedComputerwithIntel?Celeron/Pentium?Processor Features ■SlimBoxerDesign:37mm ■RichI/O,DesignforAutoSystemControl ■WideOperatingTemperature-20°C~60°C ■GigabitEthernetx2,USBx4 ■SupportWallmount | AAEONAAEON Technology 研揚(yáng)科技研揚(yáng)科技(蘇州)有限公司 | AAEON | ||
FanlessCompactEmbeddedComputerwithIntel?Celeron?/Pentium?Processor Features ■SlimBoxerDesign:42mm ■RichI/O,DesignforAutoSystemControl ■WideOperatingTemperature-20°C~60°C ■GigabitEthernetx2,USBx4 ■SupportWallmount | AAEONAAEON Technology 研揚(yáng)科技研揚(yáng)科技(蘇州)有限公司 | AAEON | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-22A,RDS(ON)=46mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=60mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-20A,RDS(ON)=48mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=62mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-5.7A,RDS(ON)=48mW@VGS=-10V. RDS(ON)=68mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-22A,RDS(ON)=46mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=60mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-20A,RDS(ON)=48mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=62mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
詳細(xì)參數(shù)
- 型號(hào):
UTR6405
- 制造商:
Microsemi Corporation
- 功能描述:
FAST RECOVERY RECTFR 50V 9A 2PIN BODY C-STUD - Bulk
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
LAIRD |
20+ |
射頻元件 |
155 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
萊爾德 |
22+ |
NA |
500000 |
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂 |
詢價(jià) | ||
TE |
2023 |
NA |
4727 |
原廠代理渠道,正品保障 |
詢價(jià) | ||
TE/泰科 |
2420+ |
/ |
470984 |
一級(jí)代理,原裝正品! |
詢價(jià) | ||
TYCO |
2022+2023+ |
n/a |
17 |
全新、原裝 |
詢價(jià) | ||
TE(泰科) |
1000 |
原裝現(xiàn)貨 |
詢價(jià) | ||||
N/A |
2102+ |
QFP |
6854 |
只做原廠原裝正品假一賠十! |
詢價(jià) | ||
n/a |
0933+ |
QFP |
272 |
普通 |
詢價(jià) | ||
UTC友順 |
24+ |
SOP-8 |
32560 |
16年現(xiàn)貨供應(yīng)商UTC友順代理批量的來(lái) |
詢價(jià) | ||
UTC/友順 |
23+ |
SOP-8 |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) |
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相關(guān)庫(kù)存
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