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UPD5702

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheμPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier

CEL

California Eastern Labs

UPD5702TU

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheμPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier

CEL

California Eastern Labs

UPD5702TU

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

FEATURES ?OutputPower:Pout=+21dBmMIN.@Pin=?5dBm,f=1.9GHz,VDS=3.0V :Pout=+21dBmMIN.@Pin=+2dBm,f=2.45GHz,VDS=3.0V ?SingleSupplyvoltage:VDS=3.0VTYP. ?Packagedin8-pinLead-LessMinimold(2.0x2.2x0.5mm)suitableforhigh-densitysurfacemounting.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD5702TU-A

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheμPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier

CEL

California Eastern Labs

UPD5702TU-E2

Marking：5702；Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

FEATURES ?OutputPower:Pout=+21dBmMIN.@Pin=?5dBm,f=1.9GHz,VDS=3.0V :Pout=+21dBmMIN.@Pin=+2dBm,f=2.45GHz,VDS=3.0V ?SingleSupplyvoltage:VDS=3.0VTYP. ?Packagedin8-pinLead-LessMinimold(2.0x2.2x0.5mm)suitableforhigh-densitysurfacemounting.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD5702TU-E2-A

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheμPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier

CEL

California Eastern Labs

UPD5702TU-E2-A

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

3VOPERATIONSILICONLDMOSFETRFPOWERAMPLIFIERINTEGRATEDCIRCUIT FOR1.9GHzPHSAND2.4GHzAPPLICATIONS DESCRIPTION TheμPD5702TUisasiliconlaterallydiffused(LD)MOSFETICdesignedforuseaspoweramplifier1.9GHzPHSand2.4GHzapplications.ThisICconsistsoftwostageamplifier

CEL

California Eastern Labs

UPD5702TU-E2-A

Package：8-SMD，扁平引線裸焊盤；包裝：散裝 類別：RF/IF，射頻/中頻和 RFID 射頻放大器 描述：IC AMP 802.15.1 2.4GHZ 8MINIMOLD

CEL

California Eastern Labs

UPD5702TU-EV09

包裝：散裝 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：EVAL BOARD UPD5702TU 900MHZ

CEL

California Eastern Labs

UPD5702TU-EV24

包裝：盒 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：EVAL BOARD UPD5702TU 2.4GHZ

CEL

California Eastern Labs

詳細(xì)參數(shù)

  • 型號：

    UPD5702

  • 制造商：

    CEL

  • 制造商全稱：

    CEL

  • 功能描述：

    NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
NEC
24+
SOP-8
118901
新進(jìn)庫存/原裝
 詢價(jià)
NEC
18+
SOT-8
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
 詢價(jià)
NEC
20+
SOP-8
2960
誠信交易大量庫存現(xiàn)貨
 詢價(jià)
CEL
20+
8-SMD
5000
無線通信IC,大量現(xiàn)貨!
 詢價(jià)
CEL
20+
射頻元件
3000
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
CEL
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價(jià)
NEC
2022
SOP-8
118901
全新原裝現(xiàn)貨熱賣
 詢價(jià)
NEC
23+
SOT-8
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
CEL
22+
8MINIMOLD
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
更多UPD5702供應(yīng)商 更新時間2025-7-8 15:01:00

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