首頁(yè) >UPD43256BGW-A10X-9JL(A)>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MOSINTEGRATEDCIRCUIT Features ?32,768wordsby8bitsorganization ?Fastaccesstime:70,85,100,120,150ns(MAX.) ?Operatingambienttemperature:TA=–25to+85°C ?Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 ?LowVCCdataretention:2.0V(MIN.) ?/OEinputforea | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION Description TheμPD43256B-Xisahighspeed,lowpower,and262,144bits(32,768wordsby8bits)CMOSstaticRAM. TheμPD43256B-Xisanextended-operating-temperatureversionoftheμPD43256B(Xversion:TA=–25to+85°C).AndAandBversionsarelowvoltageoperations.Batterybackupisava | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOSINTEGRATEDCIRCUIT Features ?32,768wordsby8bitsorganization ?Fastaccesstime:70,85,100,120,150ns(MAX.) ?Operatingambienttemperature:TA=–25to+85°C ?Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 ?LowVCCdataretention:2.0V(MIN.) ?/OEinputforea | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION Description TheμPD43256B-Xisahighspeed,lowpower,and262,144bits(32,768wordsby8bits)CMOSstaticRAM. TheμPD43256B-Xisanextended-operating-temperatureversionoftheμPD43256B(Xversion:TA=–25to+85°C).AndAandBversionsarelowvoltageoperations.Batterybackupisava | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC |
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