UPC8151TB開發(fā)板套件編程器的射頻評估開發(fā)套件開發(fā)板規(guī)格書PDF中文資料

DESCRIPTION

The μPC8128TB, μPC8151TB and μPC8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external chip inductor (eg 1005 size) which can not be realized on internal 50 ? wideband matched IC. These low current amplifiers operate on 3.0 V.

These ICs are manufactured using NEC’s 20 GHz fT NESAT? III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.

FEATURES

? Supply voltage : VCC = 2.4 to 3.3 V

? Low current consumption : μPC8128TB ; ICC = 2.8 mA TYP. @VCC = 3.0 V

μPC8151TB ; ICC = 4.2 mA TYP. @VCC = 3.0 V

μPC8152TB ; ICC = 5.6 mA TYP. @VCC = 3.0 V

? High efficiency : μPC8128TB ; PO(1 dB) = ?4.0 dBm TYP. @f = 1 GHz

μPC8151TB ; PO(1 dB) = +2.5 dBm TYP. @f = 1 GHz

μPC8152TB ; PO(1 dB) = ?4.5 dBm TYP. @f = 1 GHz

? Power gain : μPC8128TB, 8151TB ; GP = 12.5 dB TYP. @f = 1 GHz

μPC8152TB ; GP = 23 dB TYP. @f = 1 GHz

? Excellent isolation : μPC8128TB ; ISL = 39 dB TYP. @f = 1 GHz

: μPC8151TB ; ISL = 38 dB TYP. @f = 1 GHz

: μPC8152TB ; ISL = 40 dB TYP. @f = 1 GHz

? Operating frequency : 100 to 1 900 MHz (Output port LC matching)

? High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)

? Light weight : 7 mg (Standard value)

APPLICATION

? Buffer Amplifiers on 800 to 1 900 MHz cellular or cordless telephones