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UWQN20100

Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments

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V20100C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.50VatIF=5A

UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20100C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20100R

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.54VatIF=5A

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.54VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106 ?Com

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20100R

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20100S

High-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20100S

High-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20100S

High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.446VatIF=5A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20100S

High-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICAL

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20100SG

High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.50VatIF=5A

UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemp

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20100SG

HighVoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20100SG

High-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20100SG

HighVoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB20100C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB20100C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIO

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB20100C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB20100C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB20100C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.50VatIF=5A

UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB20100S

High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.446VatIF=5A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB20100S

HighVoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    UNHS20100L

  • 功能描述:

    IC CIRCUIT PROTECTOR .7A SNMP 2P

  • RoHS:

  • 類別:

    過電壓,電流,溫度裝置 >> 保險絲

  • 系列:

    UNHS200

  • 產(chǎn)品目錄繪圖:

    MFU 0402 Series

  • 特色產(chǎn)品:

    MFU Series SMD Chip Fuses

  • 標(biāo)準(zhǔn)包裝:

    1

  • 系列:

    MFU

  • 保險絲類型:

    板安裝(不包括管筒式)

  • 額定電流:

    800mA 額定電壓 -

  • AC:

    - 額定電壓 -

  • DC:

    32V

  • 響應(yīng)時間:

    快速

  • 封裝/外殼:

    0402(1005 公制)

  • 安裝類型:

    表面貼裝

  • 尺寸/尺寸:

    0.040 L x 0.020 W x 0.015 H(1.00mm x 0.50mm x 0.39mm)

  • 額定電壓時的斷路容量:

    50A 熔化

  • I²t:

    0.0023

  • 批準(zhǔn):

    UL

  • 工作溫度:

    -55°C ~ 125°C

  • 顏色:

    -

  • 包裝:

    * DC

  • 抗冷流:

    0.22 歐姆

  • 產(chǎn)品目錄頁面:

    2425(CN2011-ZH PDF)

  • 其它名稱:

    MFU0402.80DKR

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更多UNHS20100L供應(yīng)商 更新時間2024-12-30 14:19:00