首頁 >UNHS20100L>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.50VatIF=5A UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.54VatIF=5A DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.54VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106 ?Com | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.446VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICAL | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.50VatIF=5A UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemp | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HighVoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIO | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.50VatIF=5A UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.446VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HighVoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號:
UNHS20100L
- 功能描述:
IC CIRCUIT PROTECTOR .7A SNMP 2P
- RoHS:
否
- 類別:
過電壓,電流,溫度裝置 >> 保險絲
- 系列:
UNHS200
- 產(chǎn)品目錄繪圖:
MFU 0402 Series
- 特色產(chǎn)品:
MFU Series SMD Chip Fuses
- 標(biāo)準(zhǔn)包裝:
1
- 系列:
MFU
- 保險絲類型:
板安裝(不包括管筒式)
- 額定電流:
800mA 額定電壓 -
- AC:
- 額定電壓 -
- DC:
32V
- 響應(yīng)時間:
快速
- 封裝/外殼:
0402(1005 公制)
- 安裝類型:
表面貼裝
- 尺寸/尺寸:
0.040 L x 0.020 W x 0.015 H(1.00mm x 0.50mm x 0.39mm)
- 額定電壓時的斷路容量:
50A 熔化
- I²t:
0.0023
- 批準(zhǔn):
UL
- 工作溫度:
-55°C ~ 125°C
- 顏色:
-
- 包裝:
* DC
- 抗冷流:
0.22 歐姆
- 產(chǎn)品目錄頁面:
2425(CN2011-ZH PDF)
- 其它名稱:
MFU0402.80DKR
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
PANASONIC |
20+ |
電路保護(hù) |
6985 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價 | ||
PANASO |
24+ |
SOD-323 |
90000 |
一級代理商進(jìn)口原裝現(xiàn)貨、價格合理 |
詢價 | ||
Panaso |
21+ |
SOD-323 |
6000 |
絕對原裝現(xiàn)貨 |
詢價 | ||
XX |
23+ |
XX |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
PANASONIC |
9 |
1210 |
1870 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
PANASONIC |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
PANASON/松下 |
23+ |
NA/ |
5120 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
PANASONIC/松下 |
23+ |
1210 |
10800 |
只做原裝 歡迎咨詢 |
詢價 | ||
PANASONIC |
2023+ |
1210 |
8800 |
正品渠道現(xiàn)貨 終端可提供BOM表配單。 |
詢價 | ||
PANASONIC |
23+ |
原裝正品現(xiàn)貨 |
10000 |
1210 |
詢價 |
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