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UN1206

Surface Single Gas Discharge Tube

Features Non-Radioactive ROHScompliant Ultralowcapacitance(

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206

Surface Mount 2-Electrode Gas Discharge Tube

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-101H

MULTILAYER CHIP VARISTORS

Feature VaristorVoltagefrom5Vto470V Fastresponsetime Lowleakagecurrent Highsurgecurrentability Bidirectionalclamping,highenergy WideOperatingtemperaturerangefrom-55℃-125℃ SuitableforESDprotection

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-120H

MULTILAYER CHIP VARISTORS

Feature VaristorVoltagefrom5Vto470V Fastresponsetime Lowleakagecurrent Highsurgecurrentability Bidirectionalclamping,highenergy WideOperatingtemperaturerangefrom-55℃-125℃ SuitableforESDprotection

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-150ASMD

Surface Single Gas Discharge Tube

Features Non-Radioactive ROHScompliant Ultralowcapacitance(

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-180H

MULTILAYER CHIP VARISTORS

Feature VaristorVoltagefrom5Vto470V Fastresponsetime Lowleakagecurrent Highsurgecurrentability Bidirectionalclamping,highenergy WideOperatingtemperaturerangefrom-55℃-125℃ SuitableforESDprotection

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-200ASMD

Surface Single Gas Discharge Tube

Features Non-Radioactive ROHScompliant Ultralowcapacitance(

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-201H

MULTILAYER CHIP VARISTORS

Feature VaristorVoltagefrom5Vto470V Fastresponsetime Lowleakagecurrent Highsurgecurrentability Bidirectionalclamping,highenergy WideOperatingtemperaturerangefrom-55℃-125℃ SuitableforESDprotection

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-210H

MULTILAYER CHIP VARISTORS

Feature VaristorVoltagefrom5Vto470V Fastresponsetime Lowleakagecurrent Highsurgecurrentability Bidirectionalclamping,highenergy WideOperatingtemperaturerangefrom-55℃-125℃ SuitableforESDprotection

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-230ASMD

Surface Single Gas Discharge Tube

Features Non-Radioactive ROHScompliant Ultralowcapacitance(

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-240H

MULTILAYER CHIP VARISTORS

Feature VaristorVoltagefrom5Vto470V Fastresponsetime Lowleakagecurrent Highsurgecurrentability Bidirectionalclamping,highenergy WideOperatingtemperaturerangefrom-55℃-125℃ SuitableforESDprotection

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-241H

MULTILAYER CHIP VARISTORS

Feature VaristorVoltagefrom5Vto470V Fastresponsetime Lowleakagecurrent Highsurgecurrentability Bidirectionalclamping,highenergy WideOperatingtemperaturerangefrom-55℃-125℃ SuitableforESDprotection

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-270H

MULTILAYER CHIP VARISTORS

Feature VaristorVoltagefrom5Vto470V Fastresponsetime Lowleakagecurrent Highsurgecurrentability Bidirectionalclamping,highenergy WideOperatingtemperaturerangefrom-55℃-125℃ SuitableforESDprotection

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-271H

MULTILAYER CHIP VARISTORS

Feature VaristorVoltagefrom5Vto470V Fastresponsetime Lowleakagecurrent Highsurgecurrentability Bidirectionalclamping,highenergy WideOperatingtemperaturerangefrom-55℃-125℃ SuitableforESDprotection

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-300ASMD

Surface Single Gas Discharge Tube

Features Non-Radioactive ROHScompliant Ultralowcapacitance(

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-300H

MULTILAYER CHIP VARISTORS

Feature VaristorVoltagefrom5Vto470V Fastresponsetime Lowleakagecurrent Highsurgecurrentability Bidirectionalclamping,highenergy WideOperatingtemperaturerangefrom-55℃-125℃ SuitableforESDprotection

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-330H

MULTILAYER CHIP VARISTORS

Feature VaristorVoltagefrom5Vto470V Fastresponsetime Lowleakagecurrent Highsurgecurrentability Bidirectionalclamping,highenergy WideOperatingtemperaturerangefrom-55℃-125℃ SuitableforESDprotection

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-350ASMD

Surface Single Gas Discharge Tube

Features Non-Radioactive ROHScompliant Ultralowcapacitance(

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-360H

MULTILAYER CHIP VARISTORS

Feature VaristorVoltagefrom5Vto470V Fastresponsetime Lowleakagecurrent Highsurgecurrentability Bidirectionalclamping,highenergy WideOperatingtemperaturerangefrom-55℃-125℃ SuitableforESDprotection

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

UN1206-390H

MULTILAYER CHIP VARISTORS

Feature VaristorVoltagefrom5Vto470V Fastresponsetime Lowleakagecurrent Highsurgecurrentability Bidirectionalclamping,highenergy WideOperatingtemperaturerangefrom-55℃-125℃ SuitableforESDprotection

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

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16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
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更多UN1206供應商 更新時間2024-11-7 16:32:00