| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
UHB | Fuseholder Open Design, 5 x 20 mm, Solder, transparent, Cover | SCHURTERSchurter Inc. 碩特碩特集團 | SCHURTER | |
UHB | Fuseholder Open Design, 5 x 20 mm, Solder, transparent, Cover | SCHURTERSchurter Inc. 碩特碩特集團 | SCHURTER | |
1200V-100A SiC Half-Bridge Module Features *ThresholdvoltageVG(th):5V(typ)allowing0to15Vdrive *On-resistance:RDS(on)=9.4mW(typ) *Operatingtemperature:150°C(max) *Excellentreverserecovery:Qrr=1000nC *Lowbodydiodevoltage:VFSD=1.4V *Lowgatecharge:QG=170nC *Lowintrinsiccapacitance *ESD | QORVO Qorvo, Inc | QORVO | ||
Ultrafast Recovery Rectifier FEATURES ?Oxideplanarchipjunction ?Ultrafastrecoverytimes ?Softrecoverycharacteristics ?Lowswitchinglosses,highefficiency ?Highforwardsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip260°C,40s(forTO-220 | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Ultrafast Recovery Rectifier FEATURES ?Oxideplanarchipjunction ?Ultrafastrecoverytimes ?Softrecoverycharacteristics ?Lowswitchinglosses,highefficiency ?Highforwardsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderdip260°C,40s(forTO-22 | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Ultrafast Recovery Rectifier FEATURES ?Oxideplanarchipjunction ?Ultrafastrecoverytimes ?Softrecoverycharacteristics ?Lowswitchinglosses,highefficiency ?Highforwardsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip260°C,40s(forTO-220 | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Ultrafast Recovery Rectifier FEATURES ?Oxideplanarchipjunction ?Ultrafastrecoverytimes ?Softrecoverycharacteristics ?Lowswitchinglosses,highefficiency ?Highforwardsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip260°C,40s(forTO-220 | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Dual Common-Cathode Ultrafast Recovery Rectifier DualCommon-CathodeUltrafastRecoveryRectifier FEATURES ?Oxideplanarchipjunction ?Ultrafastrecoverytimes ?Softrecoverycharacteristics ?Lowswitchinglosses,highefficiency ?Highforwardsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof24 | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES ?Oxideplanarchipjunction ?Ultrafastrecoverytimes ?Softrecoverycharacteristics ?Lowswitchinglosses,highefficiency ?Highforwardsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderdip260°C,40s(forTO-22 | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Dual Common-Cathode Ultrafast Recovery Rectifier DualCommon-CathodeUltrafastRecoveryRectifier FEATURES ?Oxideplanarchipjunction ?Ultrafastrecoverytimes ?Softrecoverycharacteristics ?Lowswitchinglosses,highefficiency ?Highforwardsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof24 | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Dual Common-Cathode Ultrafast Recovery Rectifier DualCommon-CathodeUltrafastRecoveryRectifier FEATURES ?Oxideplanarchipjunction ?Ultrafastrecoverytimes ?Softrecoverycharacteristics ?Lowswitchinglosses,highefficiency ?Highforwardsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof24 | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
1200V-50A SiC Half-Bridge Module Features *On-resistance:RDS(on)=19mW(typ) *Operatingtemperature:150°C(max) *Excellentreverserecovery:Qrr=495nC *Lowbodydiodevoltage:VFSD=1.2V *Lowgatecharge:QG=85nC *ThresholdvoltageVG(th):5V(typ)allowing0to15Vdrive *ESDprotected:HBMclass2andCDMc | QORVO Qorvo, Inc | QORVO | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIUHBM45isDesignedfor FEATURES: ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIUHBS15-1isDesignedforClassC,FMBaseStationApplicationsupto900MHz. FEATURES: ?InternalInputMatchingNetwork ?PG=9.5dBat15W/900MHz ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIUHBS15-2isDesignedforClassC,FMBaseStationApplicationsupto960MHz. FEATURES: ?InternalInputMatchingNetwork ?PG=9.0dBat15W/960MHz ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIUHBS30-1isDesignedforClassC,FMBaseApplicationsupto900MHz. FEATURES: ?InternalInputMatchingNetwork ?PG=7.5dBat30W/900MHz ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIUHBS60-1isDesignedforClassC,FMBaseStationApplicationsupto900MHz. FEATURES: ?InternalInputMatchingNetwork ?PG=7.5dBat60W/900MHz ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIUHBS60-2isDesignedforClassC,FMBaseStationApplicationsupto960MHz. FEATURES: ?InternalInputMatchingNetwork ?PG=7.0dBat60W/960MHz ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
Fuseholder Open Design, 5 x 20 mm, Solder, transparent, Cover | SCHURTERSchurter Inc. 碩特碩特集團 | SCHURTER | ||
Dual Common-Cathode Ultrafast Recovery Rectifier | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay |
詳細參數(shù)
- 型號：
UHB
- 制造商：
SCHURTER
- 制造商全稱：
Schurter Inc.
- 功能描述：
Fuseholder Open Design, 5 x 20 mm, Solder, transparent, Cover
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VISHAY |
12+ |
TO-263 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。 |
詢價 | ||
VISHAY |
23+ |
D2PAK(TO-263AB) |
6680 |
全新原裝優(yōu)勢 |
詢價 | ||
VISHAY |
17+ |
TO-263 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
Vishay |
18+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
VISHAY |
22+23+ |
TO-263 |
33166 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
VISHAY |
18+ |
TO-263 |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
VISHAY |
1822+ |
TO-263 |
6852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
ASI |
24+ |
105 |
現(xiàn)貨供應(yīng) |
詢價 | |||
Vishay |
N/A |
6000 |
絕對原裝現(xiàn)貨 |
詢價 | |||
VISHAY |
2023+ |
TO-263 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 |
相關(guān)規(guī)格書
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相關(guān)庫存
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