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UH1PB_V01

Surface Mount Ultrafast Rectifier

FEATURES ?Verylowprofile-typicalheightof1.0mm ?Idealforautomatedplacement ?Oxideplanarchipjunction ?Ultrafastrecoverytimesforhighfrequency ?MeetsMSLlevel1perJ-STD-020,LFmaximumpeakof 260°C ?ComplianttoRoHSDirective2002/95/ECandin accordancetoWEEE

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

ES1PB_V01

HighCurrentDensitySurfaceMountUltrafastRectifiers

FEATURES ?Verylowprofile-typicalheightof1.0mm ?Idealforautomatedplacement ?Glasspassivatedpelletchipjunction ?Ultrafastrecoverytimesforhighefficiency ?Lowforwardvoltage,lowpowerlosses ?Lowthermalresistance ?MeetsMSLlevel1perJ-STD-020,LFmaximumpeak

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

ESH1PB_V01

HighCurrentDensitySurface-MountUltrafastRectifiers

FEATURES ?Verylowprofile-typicalheightof1.0mm ?Idealforautomatedplacement ?Glasspassivatedpelletchipjunction ?Ultrafastrecoverytimesforhighfrequency ?Lowforwardvoltagedrop,lowpowerloss ?Lowthermalresistance ?MeetsMSLlevel1perJ-STD-020,LFmaximumpeak

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MSE1PB_V01

Surface-MountESDCapabilityRectifier

FEATURES ?Verylowprofile-typicalheightof0.65mm ?Idealforautomatedplacement ?Oxideplanarchipjunction ?Lowforwardvoltagedrop,lowleakage current ?ESDcapability ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C ?AEC-Q101qualifiedavailable -Automotive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MSX1PB_V01

Surface-MountESDCapabilityRectifier

FEATURES ?Verylowprofile-typicalheightof0.65mm ?Idealforautomatedplacement ?Oxideplanarchipjunction ?Lowforwardvoltagedrop,lowleakagecurrent ?ESDcapability ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C ?AEC-Q101qualifiedavailable? -Automotive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MUH1PB_V01

SurfaceMountUltrafastRectifiers

FEATURES ?Verylowprofile-typicalheightof0.65mm ?Idealforautomatedplacement ?Oxideplanarchipjunction ?Lowforwardvoltagedrop,lowpowerlosses ?Ultrafastrecoverytimesforhighfrequency ?MeetsMSLlevel1,perJ-STD-020C, LFmaximumpeakof260°C ?AEC-Q101qualifie

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

RS1PB_V01

HighCurrentDensitySurface-MountGlassPassivatedFastSwitchingRectifier

FEATURES ?Verylowprofile-typicalheightof1.0mm ?Idealforautomatedplacement ?Glasspassivatedpelletchipjunction ?Fastswitchingforhighefficiency ?Lowthermalresistance ?Highforwardsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C ?AEC-

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

S1PB_V01

HighCurrentDensitySurface-MountGlassPassivatedRectifiers

FEATURES ?Verylowprofile-typicalheightof1.0mm ?Idealforautomatedplacement ?Glasspassivatedpelletchipjunction ?Lowforwardvoltagedrop ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C ?AEC-Q101qualified ?Materialcategorization:

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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VISHAY
21+
DO-220AA(SM
6000
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VISHAY
1809+
DO-220
16750
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24+
N/A
56000
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Vishay General Semiconductor -
24+
DO-220AA(SMP)
9350
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VISHAY
24+
5000
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UTC
20232024
SIP-4
6000
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B&B
22+
NA
194
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VISHAY
23+
TO220
6000
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Vishay
11+
TO-220-3
8000
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VISHAY
17+
TO220-3
6200
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更多UH1PB_V01供應(yīng)商 更新時間2025-2-6 10:14:00

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