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TZ2012B

Crystal Unit SMD 3.2x2.5 16MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

UB2012

ADVANCEDLINEARCHARGEMANAGEMENTICFORSINGLEANDTWO-CELLLITHIUM-IONANDLITHIUM-POLYMER

UTCUnisonic Technologies

友順友順科技股份有限公司

UB2012

ADVANCEDLINEARCHARGEMANAGEMENTICFORSINGLE

DESCRIPTION UTCUB2012isdesignedforportableelectronicswithlowercost.Itsadvantagesofhigh-accuracyvoltage/currentregulation,chargingstatusindication,temperaturemonitoring,andautomaticcharge-ratecompensation. FEATURES *IdealforSingle4.1V,4.2VandDual-Cell8.2V,8.4VLi-I

UTCUnisonic Technologies

友順友順科技股份有限公司

UB2012

ADVANCEDLINEARCHARGEMANAGEMENTIC

UTCUnisonic Technologies

友順友順科技股份有限公司

ULN2012

HIGHVOLTAGEHIGHCURRENTDARLINGTONARRAY

UTCUnisonic Technologies

友順友順科技股份有限公司

ULN2012

HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS

[SPRAGUE] HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

ULN2012A

HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS

[SPRAGUE] HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

ULN2012L

HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS

[SPRAGUE] HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

UPG2012TB

L-BANDSPDTSWITCH

DESCRIPTION The?PG2012TBisaGaAsMMICforL-bandSPDT(SinglePoleDoubleThrow)switchwhichweredevelopedformobilephoneandanotherL-bandapplication. Thisdevicecanoperatefrequencyfrom0.5GHzto2.5GHz,havingthelowinsertionlossandhighisolation.Thisdeviceishousedina

CEL

California Eastern Laboratories

UPG2012TB

L-BANDSPDTSWITCH

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2012TB

NECs1/4WSINGLECONTROLL-BANDSPDTSWITCH

DESCRIPTION TheμPG2012TBisaGaAsMMICforL-bandSPDT(SinglePoleDoubleThrow)switchwhichweredevelopedformobilephoneandanotherL-bandapplication. Thisdevicecanoperatefrequencyfrom0.5GHzto2.5GHz,havingthelowinsertionlossandhighisolation. Thisdeviceishousedin

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2012TB

GaAsINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VDD=2.7to3.0V(2.8VTYP.) ?Switchcontrolvoltage:Vcont(H)=2.7to3.0V(2.8VTYP.) :Vcont(L)=?0.2to+0.2V(0VTYP.) ?Lowinsertionloss:LINS1=0.27dBTYP.@f=0.5to1.0GHz,VDD=2.8V,Vcont=2.8V/0V :LINS2=0.30dBTYP.@f=2.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPG2012TK

NECs?WSINGLECONTROLL,S-BANDSPDTSWITCH

DESCRIPTION TheμPG2012TKisaGaAsMMICforL-bandSPDT(SinglePoleDoubleThrow)switchwhichweredevelopedformobilephoneandanotherL-bandapplication. Thisdevicecanoperatefrequencyfrom0.5GHzto2.5GHz,havingthelowinsertionlossandhighisolation. Thisdeviceishous

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2012TK

L-BANDSPDTSWITCH

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2012TK

WSINGLECONTROLL,S-BANDSPDTSWITCH

CEL

California Eastern Laboratories

UPG2012TK

GaAsINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VDD=2.7to3.0V(2.8VTYP.) ?Switchcontrolvoltage:Vcont(H)=2.7to3.0V(2.8VTYP.) :Vcont(L)=?0.2to+0.2V(0VTYP.) ?Lowinsertionloss:LINS1=0.27dBTYP.@f=0.5to1.0GHz,VDD=2.8V,Vcont=2.8V/0V :LINS2=0.30dBTYP.@f=2.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

VACL2012

Terminal,Compression

HUBBELLHUBBELL INCORPORATED

哈伯爾公司

VACL2012BN

Terminal,Compression

HUBBELLHUBBELL INCORPORATED

哈伯爾公司

VAUL2012

AluminumCompressionTerminalfor2/0AL/CU,2/06/1ACSR,3/0COMPACT

HUBBELLHUBBELL INCORPORATED

哈伯爾公司

VLS2012E

InductorsforPowerCircuitsWoundFerrite

OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount

TDKTDK Corporation

TDK株式會(huì)社東電化(中國(guó))投資有限公司

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23+
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172000
華南總代
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19
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