零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
TZ1715A | HC49US DIP 24.576MHz Crystal Unit Features: SurfaceMountSeamWeldPackage GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: HC49UScrystalunitforuseinwirelesstelecommunicationsdevices | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | |
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
COMPLIMENTARYSWITCHFETDRIVERS | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
Constantvoltagecontrol | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
High-EfficiencySynchronous-RectifiedBuckConverter | UPI uPI Semiconductor Corp | UPI | ||
High-EfficiencySynchronous-RectifiedBuckConverter | UPI uPI Semiconductor Corp | UPI | ||
SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION ThisproductisP-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofnotebookcomputersandLi-ionbatteryprotectioncircuit. FEATURES ?Lowon-resistance RDS(on)1=8.5m?TYP.(VGS=–10V,ID=–6.0A) RDS(on)2=11.0m?TYP.(VGS=–4.5 | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·Lowon-resistance RDS(on)1=8.5mWTYP.(VGS=–10V,ID=–6.0A) RDS(on)2=11.0mWTYP.(VGS=–4.5V,ID=–6.0A) RDS(on)3=12.0mWTYP.(VGS=–4.0V,ID=–6.0A) ·LowCiss:Ciss=3800pFTYP. ·Built-inG-Sprotect | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·Lowon-resistance RDS(on)1=8.5mWTYP.(VGS=–10V,ID=–6.0A) RDS(on)2=11.0mWTYP.(VGS=–4.5V,ID=–6.0A) RDS(on)3=12.0mWTYP.(VGS=–4.0V,ID=–6.0A) ·LowCiss:Ciss=3800pFTYP. ·Built-inG-Sprotect | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION ThisproductisP-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofnotebookcomputersandLi-ionbatteryprotectioncircuit. FEATURES ?Lowon-resistance RDS(on)1=8.5m?TYP.(VGS=–10V,ID=–6.0A) RDS(on)2=11.0m?TYP.(VGS=–4.5 | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TST |
23+ |
- |
35375 |
華南總代 |
詢價 | ||
TAISAW |
24+ |
SMD |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
24+ |
N/A |
75000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
TST |
23+ |
NA/ |
3450 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 |
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