首頁 >TSM60N06CPROG-VB>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
TMOSPOWERFET60AMPERES60VOLTSRDS(on)=0.014OHM Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
60V??60A??N-channelPowerMOSFET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
60V–60A–N-channelPowerMOSFETApplication:Automotive Description NP60N06MLKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)1=8.1m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2400pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-channelPowerMOSFET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
60V–60A–N-channelPowerMOSFETApplication:Automotive Description NP60N06PDKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)1=7.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2400pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
60V??60A??N-channelPowerMOSFET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
60V–60A–N-channelPowerMOSFETApplication:Automotive Description NP60N06PLKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)1=7.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2400pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
60V??60A??N-channelPowerMOSFET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
60V–60A–N-channelPowerMOSFETApplication:Automotive Description NP60N06VDKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)1=7.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2400pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
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