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TSM2N7000CT

60V N-Channel MOSFET

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

TSM2N7000CTA3

60V N-Channel Enhancement Mode MOSFET

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

TSM2N7000CTB0

60V N-Channel Enhancement Mode MOSFET

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

2N7000

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

■DESCRIPTION TheUTC2N7000hasbeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,

UTCUnisonic Technologies

友順友順科技股份有限公司

2N7000

N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET

Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

2N7000

N-ChannelEnhancementModePowerMos.FET

FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATIONS ●Loadswitchforportabledevices ●DC/DCconverter

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2N7000

TECHNICALSPECIFICATIONSOFN-CHANNELSMALLSIGNALMOSFET

Description Designedforlowvoltageandlowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andotherswitchingapplications.

DCCOM

Dc Components

2N7000

N-channel60V-1.8廓-0.35A-SOT23-3L/TO-92STripFET??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

2N7000

N-ChannelEnhancement-ModeVerticalDMOSFETs

SUTEX

Supertex, Inc

2N7000

N-CHANNEL-ENHANCEMENT

TRSYS

Transys Electronics

2N7000

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

2N7000

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertex2N7000isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

SUTEX

Supertex, Inc

2N7000

CASE29-04,STYLE22TO-92(TO-226AA)

Motorola

Motorola, Inc

2N7000

SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92

SmallSignalMOSFET200mAmps,60Volts N?ChannelTO?92 Features ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N7000

N-ChannelEnhancementModeFieldEffectTransistor

NSCNational Semiconductor (TI)

美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司

2N7000

LogicN-ChannelMOSFET

GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max5?)@VGS=10V RDS(on)(Max5.3?)@VGS=4.5V ■GateCharge(Typical

semiWell

SemiWell Semiconductor

2N7000

DMOSTransistors(N-Channel)

GE

GE Industrial Company

2N7000

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N7000

FIELDEFFECTTRANSISTOR

INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?Ruggedandreliable. ?Highsaturationcurrentcapability.

KECKEC CORPORATION

KEC株式會(huì)社

2N7000

SmallSignalMOSFETN-Channel

Features: *LowOn-Resistance:5Ω *LowInputCapacitance:60PF *LowOutputCapacitance:25PF *LowThreshole:1.4V(TYE) *FastSwitchingSpeed:10ns

WEITRON

Weitron Technology

詳細(xì)參數(shù)

  • 型號(hào)：

    TSM2N7000CT

  • 功能描述：

    MOSFET 60V 0.2A 0.35W

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TS
24+
TO-92
2000
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TS
2023+
TO-92
80000
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TSC
22+
TO-92
32350
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TSC
23+
TO-92
50000
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TAIWAN SEMICONDUCTOR
23+
TO-92
50000
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TSC
18+
TO-92
1955
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
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TO-92
893993
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23+
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4455
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23+
NA/
5205
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56000
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更多TSM2N7000CT供應(yīng)商 更新時(shí)間2024-10-26 16:00:00

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