TSM2N60CH中文資料臺灣半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
TSM2N60CH規(guī)格書詳情
General Description
The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients
Features
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a discrete fast recovery diode.
產(chǎn)品屬性
- 型號：
TSM2N60CH
- 功能描述：
MOSFET 600V 2Amp N channel MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TAIWAN SEMONDUCTOR |
23+ |
NA/ |
13318 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 | ||
TSC/臺灣半導(dǎo)體 |
22+ |
TO-252 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
TS |
2018+ |
TO251 |
6528 |
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心 |
詢價 | ||
TOSHIBA |
22+ |
TO-251 |
3000 |
原裝正品,支持實單 |
詢價 | ||
TSC |
24+ |
TO251 |
18000 |
原裝正品 有掛有貨 假一賠十 |
詢價 | ||
TSC/臺半 |
TO-251 |
8422 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
TSC |
24+ |
TO251 |
2771 |
詢價 | |||
TSC |
2021+ |
TO-252 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
TAIWANSEMI |
22+ |
TO-252 |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
TW |
22+ |
SOT-252 |
20000 |
保證原裝正品,假一陪十 |
詢價 |
