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2313-RC

HighCurrentToroidInductors

BournsBourns Electronic Solutions

伯恩斯

2313-RC

HighCurrentToroidInductorsHorizontalorverticalmount

BournsBourns Electronic Solutions

伯恩斯

2313-RC

HighCurrentToroidInductors

BournsBourns Electronic Solutions

伯恩斯

2313-RC

HighCurrentToroidInductors

BournsBourns Electronic Solutions

伯恩斯

2313-RC

HighCurrentToroidInductors

BournsBourns Electronic Solutions

伯恩斯

AM2313

MOSFETP-CHANNELENHANCEMENTMODE

DESCRIPTION TheAM2313isavailableinSOT-23Spackage. FEATURES ?-18V/3A, RDS(ON)=120mΩ(MAX)@VGS=-4.5V. RDS(ON)=150mΩ(MAX)@VGS=-2.5V. ?SuperHighdensecelldesignforextremelylowRDS(ON). ?ReliableandRugged. ?AvailableinSOT-23SPackage APPLICATION ?PowerManag

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

AM2313P

P-ChannelLogicLevelMOSFET

TheseminiaturesurfacemountMOSFETsutilizeHighCellDensityprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinpowermanagementcircuitry.Typicalapplicationsarevoltagecontrolsmallsignalswitch,powermanagementinportableandbatte

AnalogPower

Analog Power

AP2313GN-HF

SimpleDriveRequirement,SmallPackageOutline

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

APM2313

P-ChannelEnhancementModeMOSFET

Features ?-20V/-1.8A,RDS(ON)=108m?(typ.)@VGS=-4.5V RDS(ON)=135m?(typ.)@VGS=-2.5V ?SuperHighDenseCellDesignforExtremely LowRDS(ON) ?ReliableandRugged ?SOT-23Package Applications ?PowerManagementinNotebookComputer,PortableEquip

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

APM2313A

P-ChannelEnhancementModeMOSFET

Features ?-20V/-1.8A,RDS(ON)=108m?(typ.)@VGS=-4.5V RDS(ON)=135m?(typ.)@VGS=-2.5V ?SuperHighDenseCellDesignforExtremely LowRDS(ON) ?ReliableandRugged ?SOT-23Package Applications ?PowerManagementinNotebookComputer,PortableEquip

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

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